Co-Implantation of Carbon and Protons: An Integrated Silicon Device Technology Compatible Method to Generate the Lasing G-Center

被引：42

作者：

Berhanuddin, Dilla D. ^{[1
,2
]}

Lourenco, Manon A. ^{[1
]}

Gwilliam, Russell M. ^{[1
]}

Homewood, Kevin P. ^{[1
]}

机构：

[1] Univ Surrey, Adv Technol Inst, Fac Engn & Phys Sci, Guildford GU2 7XH, Surrey, England

[2] Univ Kebangsaan Malaysia, Inst Microengn & Nanoelect, Bangi 43000, Selangor, Malaysia

来源：

ADVANCED FUNCTIONAL MATERIALS | 2012年 / 22卷 / 13期

基金：

英国工程与自然科学研究理事会; 欧洲研究理事会;

关键词：

optically active materials; photoluminescence; photonics; semiconductors; LIGHT-EMITTING DIODE; OPTICAL-PROPERTIES; RAMAN LASER; NANOCRYSTALS; GAIN;

D O I：

10.1002/adfm.201103034

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The optically active carbon related G-center is attracting great interest because of evidence that it can provide lasing in silicon. Here a technique to form the G-center in silicon is reported. The carbon G-center is generated by implantation of carbon followed by proton irradiation. Photoluminescence measurements confirm the controlled formation of high levels of the G-center that, importantly, completely dominates the emission spectrum. Unlike previous methods of introducing the G-center the current approach significantly is truly fully compatible with standard silicon ULSI (ultralarge scale integration) technology.

引用

页码：2709 / 2712

页数：4

共 17 条

[1] Point defect engineered Si sub-bandgap light-emitting diode [J].

Bao, Jiming ;

Tabbal, Malek ;

Kim, Taegon ;

Charnvanichborikarn, Supakit ;

Williams, James S. ;

Aziz, Michael. J. ;

Capasso, Federico .

OPTICS EXPRESS, 2007, 15 (11) :6727-6733

[2] Demonstration of a silicon Raman laser [J].

Boyraz, O ;

Jalali, B .

OPTICS EXPRESS, 2004, 12 (21) :5269-5273

[3] 1.3-MU-M LIGHT-EMITTING DIODE FROM SILICON ELECTRON-IRRADIATED AT ITS DAMAGE THRESHOLD [J].

CANHAM, LT ;

BARRACLOUGH, KG ;

ROBBINS, DJ .

APPLIED PHYSICS LETTERS, 1987, 51 (19) :1509-1511

[4] Optical gain and stimulated emission in periodic nanopatterned crystalline silicon [J].

Cloutier, SG ;

Kossyrev, PA ;

Xu, J .

NATURE MATERIALS, 2005, 4 (12) :887-891

[5] THE OPTICAL-PROPERTIES OF LUMINESCENCE-CENTERS IN SILICON [J].

DAVIES, G .

PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 1989, 176 (3-4) :83-188

[6] Silicon nanocrystals with ensemble quantum yields exceeding 60% [J].

Jurbergs, David ;

Rogojina, Elena ;

Mangolini, Lorenzo ;

Kortshagen, Uwe .

APPLIED PHYSICS LETTERS, 2006, 88 (23)

[7] High-density G-centers, light-emitting point defects in silicon crystal [J].

Murata, Koichi ;

Yasutake, Yuhsuke ;

Nittoh, Koh-ichi ;

Fukatsu, Susumu ;

Miki, Kazushi .

AIP ADVANCES, 2011, 1 (03)

[8] An efficient room-temperature silicon-based light-emitting diode [J].

Ng, WL ;

Lourenço, MA ;

Gwilliam, RM ;

Ledain, S ;

Shao, G ;

Homewood, KP .

NATURE, 2001, 410 (6825) :192-194

[9] Erbium-doped Si nanocrystals:: optical properties and electroluminescent devices [J].

Pacifici, D ;

Irrera, A ;

Franzò, G ;

Miritello, M ;

Iacona, F ;

Priolo, F .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 16 (3-4) :331-340

[10] Optical gain in silicon nanocrystals [J].

Pavesi, L ;

Dal Negro, L ;

Mazzoleni, C ;

Franzò, G ;

Priolo, F .

NATURE, 2000, 408 (6811) :440-444

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