Novel nanostructures of β-Ga2O3 synthesized by thermal evaporation

被引:12
作者
Yang, ZX [1 ]
Zhu, F [1 ]
Zhou, WM [1 ]
Zhang, YF [1 ]
机构
[1] Shanghai Jiao Tong Univ, Key Lab Thin Film & Microfabricat Technol, Minist Educ, Res Inst Micro Naometer Sci & Technol, Shanghai 200030, Peoples R China
关键词
beta-Ga2O3; nanostructures; thermal evaporation;
D O I
10.1016/j.physe.2005.07.011
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this study, we report the novel beta-Ga2O3 nanostructures synthesized by the thermal evaporation of Ga droplet in the presence of Au catalysts at 900 degrees C. The morphology and Structure of the products were analyzed by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray diffraction (XRD). The single-crystallitie beta-Ga2O3 nanosheets have lateral dimensions LIP to several tens of microns. Large arrays of colunin-like layered crystal beta-Ga2O3 structures that consisted of many nanosheets were formed on the Au-coated silicon substrate Under the suitable vapor concentration. These novel beta-Ga2O3 nanostructures are expected to have potential application in functional nanodevices. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:93 / 95
页数:3
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