Effects of 50 keV and 100 keV Proton Irradiation on GaInP/GaAs/Ge Triple-Junction Solar Cells

被引：5
作者：
Wang Rong [1 ,2 ,3 ]
Feng Zhao [1 ,2 ]
Liu Yunhong [1 ,2 ]
Lu Ming [1 ,2 ]
机构：
[1] Beijing Normal Univ, Key Lab Beam Technol & Met Modificat, Minist Educ, Beijing 100875, Peoples R China
[2] Beijing Normal Univ, Coll Nucl Sci & Technol, Beijing 100875, Peoples R China
[3] Beijing Radiat Ctr, Beijing 100875, Peoples R China
来源：
PLASMA SCIENCE & TECHNOLOGY | 2012年 / 14卷 / 07期
基金：
中国国家自然科学基金;
关键词：
GaInP/GaAs/Ge solar cell; proton irradiation; spectral response;
D O I：
10.1088/1009-0630/14/7/18
中图分类号：
O35 [流体力学]; O53 [等离子体物理学];
学科分类号：
070204 ; 080103 ; 080704 ;
摘要：
GaInP/GaAs/Ge triple-junction solar cells were irradiated with 50 keV and 100 keV protons at fluences of 5 x 10(10) cm(-2), 1 x 10(11) cm(-2), 1 x 10(12) cm(-2), and 1 x 10(13) cm(-2). Their performance degradation is analyzed using current-voltage characteristics and spectral response measurements, and then the changes in I-sc, V-oc, P-max and the spectral response of the cells are observed as functions of proton irradiation fluence and energy. The results show that the spectral response of the top cell degrades more significantly than that of the middle cell, and 100 keV proton-induced degradation rates of I-sc, V-oc and P-max are larger compared with 50 keV proton irradiation.
引用
收藏
页码：647 / 649
页数：3
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