Reduction of Efficiency Droop in GaInN/GaN Light-emitting Diodes with Thick AlGaN Cladding Layers

被引：13

作者：

Mao, An ^{[2
]}

Cho, Jaehee ^{[2
]}

Schubert, E. Fred ^{[2
]}

Son, Joong Kon ^{[3
]}

Sone, Cheolsoo ^{[3
]}

Ha, Woo Jin ^{[1
]}

Hwang, Sunyong ^{[1
]}

Kim, Jong Kyu ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea

[2] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

[3] Samsung LED, LED Lab, Corp R&D Inst, Suwon 443743, South Korea

来源：

ELECTRONIC MATERIALS LETTERS | 2012年 / 8卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

GaN; light-emitting diodes; efficiency droop; laser diode; BLUE LASER-DIODES; TEMPERATURE CHARACTERISTICS; QUANTUM EFFICIENCY; LEDS;

D O I：

10.1007/s13391-011-0780-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

GaInN/GaN multiple-quantum-well light-emitting diodes (LEDs) with 0.4 mu m-thick AlGaN cladding layers and two quantum wells (QWs), designed for investigating the origin of efficiency droop, are demonstrated to have a lower efficiency droop than typical GaInN/GaN LEDs with 5 QWs. Considering the much less electron leakage over the active region, and the larger carrier density due to the smaller active volume of the LED with AlGaN cladding layers than those of the typical LED, it is suggested that the dominant mechanism responsible for the efficiency droop is electron leakage rather than the Auger recombination which scales with the cubic power of the carrier density.

引用

页码：1 / 4

页数：4

共 18 条

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