Forming-free resistive switching behavior in Nd2O3, Dy2O3, and Er2O3 films fabricated in full room temperature

被引：73
作者：
Pan, Tung-Ming [1 ]
Lu, Chih-Hung [1 ]
机构：
[1] Chang Gung Univ, Dept Elect Engn, Tao Yuan 333, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 11期
关键词：
TRANSITION; MEMORY;
D O I：
10.1063/1.3638490
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this study, we reported the forming-free resistive switching behavior in the Ru/RE2O3/TaN (RE = Nd, Dy, and Er) memory devices using thin Nd2O3, Dy2O3, and Er2O3 films fabricated with full room temperature process. The dominant conduction mechanisms of the Ru/RE2O3/TaN devices in the low-resistance state and high-resistance state are Ohmic behavior. The Ru/Dy2O3/TaN memory device exhibited high resistance ratio, nondestructive readout, reliable data retention, and good endurance. Ru/Dy2O3/TaN memory device has a great potential for the application in nonvolatile resistive switching memory. (C) 2011 American Institute of Physics. [doi:10.1063/1.3638490]
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