Atomic-layer-deposited tantalum silicate as a gate dielectric for III-V MOS devices

被引：17

作者：

Adelmann, C. ^{[1
]}

Lin, D. ^{[1
]}

Nyns, L. ^{[1
]}

Schepers, B. ^{[1
]}

Delabie, A. ^{[1
]}

Van Elshocht, S. ^{[1
]}

Caymax, M. ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 07期

关键词：

III-V Semiconductors; InGaAs; MOS devices; Tantalum silicate; AL2O3;

D O I：

10.1016/j.mee.2011.03.135

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

TaSiOx thin films with Si/(Ta + Si) mole fractions between 0 and 0.6 have been deposited using atomic-layer deposition on Si and InGaAs at 250 degrees C. Interface defects on InGaAs were on the order of 10(12) cm(-2) eV(-1), which is comparable to state-of-the-art Al2O3 deposited by atomic-layer deposition using Al(CH3)(3) and H2O while the dielectric permittivity of TaSiOx, is considerably higher. (c) 2011 Elsevier B.V. All rights reserved.

引用

页码：1098 / 1100

页数：3

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