Understanding the optical anisotropy of oxidized Si(001) surfaces

被引：29

作者：

Fuchs, F ^{[1
]}

Schmidt, WG ^{[1
]}

Bechstedt, F ^{[1
]}

机构：

[1] Univ Jena, Inst Festkorpetheorie & Opt, D-07743 Jena, Germany

来源：

PHYSICAL REVIEW B | 2005年 / 72卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.72.075353

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

First-principles optical-response calculations of oxidized and strained Si structures are presented. Local Si lattice deformations accompanying the oxidation of Si bulk bonds cause pronounced optical anisotropies that account very well for the reflectance difference signal measured during oxide growth [Yasuda , Phys. Rev. Lett. 87, 037403 (2001)]. In contrast, calculations for various energetically favored (4x2) and (2x2) reconstructed overlayer structures fail to reproduce the experiment.

引用

页数：5

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