GaN-Based light-emitting diode with indium-tin-oxide and vertical electrode

被引：0

作者：

Kim, SJ ^{[1
]}

机构：

[1] Itswell Co Ltd, Photon Devices Res Lab, Namchon Ri 363911, Chungbuk, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 08期

关键词：

InGaN/GaN; LED; sapphire; MOCVD; EDS; etching; ITO;

D O I：

10.1143/JJAP.44.5994

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A sapphire-etched vertical-electrode nitride semiconductor (SEVENS) light-emitting diode (LED) is fabricated by a selective wet-etching technique. The SEVENS-LED has an indium-tin-oxide (ITO) transparent metal electrode (TME) and a sapphire via hole. The SEVENS-LED exhibits excellent device performances compared with a lateral-electrode (LE) GaN-based LED formed on a sapphire substrate. The light-output power of the SEVENS-LED is similar to 7 mW at a 20 mA junction current, which means 13% external quantum efficiency (EQE). The electrostatic discharge (ESD) test shows excellent ESD characteristics of the SEVENS-LED compared with those of the ITO LE-LED. The reverse ESD amplitude of SEVENS-LED is approximately 200V, which is two times higher than that (similar to 100V) of the ITO LE-LED. These improvements of ESD properties are attributed to the change of the lateral electrode to a vertical electrode, without requiring the transfer of the sapphire substrate to a conducting substrate.

引用

页码：5994 / 5999

页数：6

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