Increased thermal stability of W/Ta2O5 gate structure using effective diffusion barrier of denuded tungsten nitride

被引：5
作者：
Cho, IH [1 ]
Park, JS
Sohn, DK
Ha, JH
机构：
[1] Hynix Semicond Inc, Syst IC R&D Div, Cheongju 361480, South Korea
[2] Appl Mat Korea, Chunan 339290, Chungnam, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 08期
关键词：
W; Ta2O5; WNx; TiN; metal gate; high-k; diffusion barrier; denudation; thermal stability;
D O I：
10.1143/JJAP.40.4854
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated the effect of TiN and WNx diffusion barrier on the thermal stability and electrical properties of W/Ta2O5 gate structure. For TiN/Ta2O5 system annealed at 950 degreesC, both tantalum and oxygen in Ta2O5 films significantly migrated to TiN layer, resulting in the partial oxidation of TiN and the formation of voids in the Ta2O5 layers and increasing the roughness at the TiN/Ta2O5 interface. However, for the WNx/Ta2O5 system annealed even at 950 degreesC, no outdiffusion of tantalum and oxygen from Ta2O5 into annealed-WNx layer was observed. A nitrogen-rich barrier with Ta-O-N bonding formed on Ta2O5 surface during denudation of WNx caused the high thermal stability of WNx/Ta2O5. The electrical characteristics of W/WNx/Ta2O5 system was found to be more superior than that of W/TiN/Ta2O5 in the respect of leakage current and breakdown voltage, thus it can be one of promising metal gate structures with high-dielectric in sub-100 nm metal-oxide semiconductor (MOS) devices.
引用
收藏
页码：4854 / 4861
页数：8
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