Probing solid state N-doping in graphene by X-ray absorption near-edge structure spectroscopy

被引：114

作者：

Zhong, Jun ^{[1
]}

Deng, Jiu-Jun ^{[1
]}

Mao, Bao-Hua ^{[1
]}

Xie, Tian ^{[1
]}

Sun, Xu-Hui ^{[1
]}

Mou, Zhi-Gang ^{[2
]}

Hong, Cai-Hao ^{[3
]}

Yang, Ping ^{[2
]}

Wang, Sui-Dong ^{[1
]}

机构：

[1] Soochow Univ, Inst Funct Nano & Soft Mat Lab FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Peoples R China

[2] Soochow Univ, Coll Chem Chem Engn & Mat Sci, Suzhou 215123, Peoples R China

[3] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China

来源：

CARBON | 2012年 / 50卷 / 01期

基金：

中国国家自然科学基金;

关键词：

DOPED GRAPHENE; OXIDE; DEPOSITION;

D O I：

10.1016/j.carbon.2011.08.046

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The evolution of solid state N-doping in graphene has been probed using X-ray absorption near-edge structure (XANES) spectroscopy. The XANES spectra show that the modification of graphene with N species can be achieved by urea attachment at annealing temperatures lower than 300 degrees C. A transition from urea to amino species is observed at 400 degrees C. At higher temperatures, pyridinic and graphitic type doping are achieved. The results indicate that the electronic structure of graphene can be controlled by solid state treatment, involving different N species depending on the annealing process. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：335 / 338

页数：4

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