Thermoelectric properties of Zn5Sb4In2-δ (δ=0.15)

被引：6

作者：

Wu, Y. ^{[1
]}

Litvinchuk, A. P. ^{[2
,3
]}

Toberer, E. S. ^{[4
]}

Snyder, G. J. ^{[5
]}

Newman, N. ^{[6
]}

Fischer, A. ^{[7
]}

Scheidt, E. -W. ^{[7
]}

Scherer, W. ^{[7
]}

Haeussermann, U. ^{[1
]}

机构：

[1] Arizona State Univ, Dept Chem & Biochem, Tempe, AZ 85287 USA

[2] Univ Houston, Dept Phys, Houston, TX 77204 USA

[3] Univ Houston, TCSUH, Houston, TX 77204 USA

[4] Colorado Sch Mines, Dept Phys, Golden, CO 80401 USA

[5] CALTECH, Pasadena, CA 91125 USA

[6] Arizona State Univ, Sch Mat, Tempe, AZ 85287 USA

[7] Univ Augsburg, Dept Phys, D-86159 Augsburg, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 12期

基金：

美国国家科学基金会;

关键词：

SEMICONDUCTOR; ANTIMONIDES; COMPOUND; ZN4SB3; ZINC;

D O I：

10.1063/1.4729566

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The polymorphic intermetallic compound Zn5Sb4In2-delta (delta = 0.15(3)) shows promising thermoelectric properties at low temperatures, approaching a figure of merit ZT of 0.3 at 300 K. However, thermopower and electrical resistivity changes discontinuously at around 220 K. Measurement of the specific heat locates the previously unknown temperature of the order-disorder phase transition at around 180K. Investigation of the charge carrier concentration and mobility by Hall measurements and infrared reflection spectroscopy indicate a mixed conduction behavior and the activation of charge carriers at temperatures above 220 K. Zn5Sb4In2-delta has a low thermal stability, and at temperatures above 470K samples decompose into a mixture of Zn, InSb, and Zn4Sb3. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729566]

引用

页数：7

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