Thermal expansion and electrical resistivity of EuNi2(Si1-xGex)2

被引：22

作者：

Wada, H ^{[1
]}

Sakata, T

Nakamura, A

Mitsuda, A

Shiga, M

Ikeda, Y

Bando, Y

机构：

[1] Kyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan

[2] Kyoto Univ, Inst Chem Res, Uji, Kyoto 6110011, Japan

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1999年 / 68卷 / 03期

关键词：

intermediate valence; EuNi2(Si1-xGex)(2); thermal expansion; electrical resistivity; first-order phase transition;

D O I：

10.1143/JPSJ.68.950

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The thermal expansion and temperature dependence of electrical resistivity were measured for EuNi2 (Si1-xGex)(2), which shows a valence transition against temperature in 0.5 less than or equal to x less than or equal to 0.82. A first-order phase transition was observed in the temperature dependence of the lattice parameters of x = 0.79 and 0.82, while the lattice parameters vary continuously with temperature for x less than or equal to 0.70. The temperature dependence of electrical resistivity shows a peak at the valence transition temperature. The origin of the peak is discussed on the basis of the dynamic alloy model.

引用

页码：950 / 953

页数：4

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