Development of chitosan base PbBiS2 thin films for photovoltaic application

被引：0

作者：

Shanthi, D. ^{[1
]}

Yogananth, A. ^{[2
]}

Anandhavelu, S. ^{[3
]}

Balasubramanian, V. ^{[4
]}

Suresh, J. ^{[5
]}

Babu, S. A. ^{[3
]}

Sarveswaran, S. ^{[6
]}

机构：

[1] Vel Tech Multi Tech Dr Rangarajan, Dr Sakunthala Engn Coll, Dept Chem, Avadi, Tamil Nadu, India

[2] Sanghamam Coll Arts & Sci, Dept Chem, Melmalyanur, Tamil Nadu, India

[3] Sri Venkateswara Coll Engn, Dept Appl Chem, Sriperumbudur 602117, Tamil Nadu, India

[4] Amrita Vidyalayam, Dept Sci, Coimbatore 641006, Tamil Nadu, India

[5] Sri Ramakrishna Engn Coll, Dept Chem, Coimbatore 641022, Tamil Nadu, India

[6] Sri Ramakrishna Engn Coll, Dept Robot & Automat, Coimbatore 641022, Tamil Nadu, India

来源：

CHALCOGENIDE LETTERS | 2022年 / 19卷 / 10期

关键词：

Thin films; Chemical bath deposition; PbBiS2; SEM; PL; I-V measurement; TEMPERATURE; NANOWIRES;

D O I：

10.15251/CL.2022.1910.725

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Novel poly-crystalline nature of chitosan (CS) based Lead Bismuth Sulphide (PbBiS2) thin films have been deposited at different deposition temperatures by chemical bath deposition (CBD), a lucid and low cost technique. Structural, optical and electrical properties of the films were investigated using X-ray diffraction (XRD), Energy dispersive analysis of X-ray (EDAX), Scanning Electron Microscopy (SEM), Spectrophotometry, Photoluminescence, Hall Effect and Current-Voltage (I-V) estimations. The films were identified to be polycrystalline with orthorhombic shape. The films exhibited a highly reflective surface with a metal appearance. The optical band differences on the films ranged from 2.22 to 1.97 eV. The negative nature of the Hall coefficients indicated that the majority of load-carrying materials were electrons. The intensity of the photo-luminescence emission was increased. Current-voltage measurements reported the semiconductor nature of the film. The prepared thin films are suitable for solar cell applications.

引用

页码：725 / 734

页数：10

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