Timing Jitter Characterization of a Free-Running SESAM Mode-locked VECSEL

被引:26
|
作者
Wittwer, V. J. [1 ]
Zaugg, C. A. [1 ]
Pallmann, W. P. [1 ]
Oehler, A. E. H. [1 ]
Rudin, B. [1 ]
Hoffmann, M. [1 ]
Golling, M. [1 ]
Barbarin, Y. [1 ]
Suedmeyer, T. [1 ]
Keller, U. [1 ]
机构
[1] ETH, Dept Phys, Inst Quantum Elect, CH-8093 Zurich, Switzerland
来源
IEEE PHOTONICS JOURNAL | 2011年 / 3卷 / 04期
关键词
Photon sources; diode-pumped lasers; infrared lasers; mode-locked lasers; semiconductor lasers; ultrafast lasers; EMITTING SEMICONDUCTOR-LASER; HIGH-POWER; FEMTOSECOND;
D O I
10.1109/JPHOT.2011.2160050
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present timing jitter measurements of an InGaAs quantum well vertical external cavity surface emitting laser (VECSEL) passively mode locked with a quantum dot semiconductor saturable absorber mirror (SESAM) at 2-GHz repetition rate. It generates 53-mW average output power in 4.6-ps pulses at 953 nm. The laser housing was optimized for high mechanical stability to reduce acoustic noise. We use a fiber-coupled multimode 808-nm pump diode, which is mounted inside the laser housing. No active cavity length stabilization is employed. The phase noise of the free-running laser integrated over a bandwidth from 100 Hz to 1 MHz corresponds to an RMS timing jitter of approximate to 212 fs, which is lower than previously obtained for mode-locked VECSELs. This clearly confirms the superior noise performance expected from a high-Q-cavity semiconductor laser. In contrast to edge-emitting semiconductor diode lasers, the cavity mode is perpendicular to the quantum well gain layers, which minimizes complex dispersion and nonlinear dynamics.
引用
收藏
页码:658 / 664
页数:7
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