The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system

被引：7
作者：
Zhang, P. F. [1 ]
Nagle, R. E. [1 ]
Deepak, N. [1 ]
Povey, I. M. [1 ]
Gomeniuk, Y. Y. [1 ]
O'Connor, E. [1 ]
Petkov, N. [1 ]
Schmidt, M. [1 ]
O'Regan, T. P. [1 ]
Cherkaoui, K. [1 ]
Pemble, M. E. [1 ]
Hurley, P. K. [1 ]
Whatmore, R. W. [1 ]
机构：
[1] Univ Coll Cork, Tyndall Natl Inst, Prospect Row, Cork, Ireland
来源：
MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 07期
关键词：
Atomic vapour deposition; Strontium tnatalate; MIS structures; Gallium compounds; Transmission electron microscopy; III-V semiconductors; Indium compounds; Leakage currents; DIELECTRICS; DEPOSITION; INTERFACE; LAYERS; AL2O3;
D O I：
10.1016/j.mee.2011.03.118
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The structural and electrical properties of SrTa2O6(SrTaO)/n-In0.53GaAs0.47(InGaAs)/InP structures where the SrTaO was grown by atomic vapor deposition, were investigated. Transmission electron microscopy revealed a uniform, amorphous SrTaO film having an atomically flat interface with the InGaAs substrate with a SrTaO film thickness of 11.2 nm. The amorphous SrTaO films (11.2 nm) exhibit a dielectric constant of similar to 20, and a breakdown field of > 8 MV/cm. A capacitance equivalent thickness of similar to 1 nm is obtained for a SrTaO thickness of 3.4 nm, demonstrating the scaling potential of the SrTaO/InGaAs MOS system. Thinner SrTaO films (3.4 nm) exhibited increased non-uniformity in thickness. From the capacitance-voltage response of the SrTaO (3.4 nm)/n-InGaAs/InP structure, prior to any post deposition annealing, a peak interface state density of similar to 2.3 x 10(13) cm(-2) eV(-1) is obtained located at similar to 0.28 eV (+/- 0.05 eV) above the valence band energy (E-v) and the integrated interface state density in range E-v + 0.2 to E-v + 0.7 eV is 6.8 x 10(12) cm(-2). The peak energy position (0.28 +/- 0.05 eV) and the energy distribution of the interface states are similar to other high-k layers on InGaAs, such as Al2O3 and LaAlO3, providing further evidence that the interface defects in the high-k/InGaAs system are intrinsic defects related to the InGaAs surface. (c) 2011 Elsevier B.V. All rights reserved.
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页码：1054 / 1057
页数：4
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