MOCVD of YF3 and Y1-xErxF3 thin films from precursors synthesized in situ

RE(hfac)(3) precursors (RE=Y, Er and Hhfac=1,1,1,5,5,5-hexafluoroacetylacetonate) have been obtained in-situ in a metal-organic (MO) CVD reactor by vapor-solid reaction between Hhfac and powders of suitable mixtures of RE2O3 oxides. YF3 and Y1-xErxF3 (x=0.2) ultra-thin films have been deposited over glass substrates under Ar/O-2 environments. Fourier-transform infrared (FTIR) in-situ measurements have been used to identify the nature of the precursor species in the gas phase, as well as to investigate decomposition mechanisms which accompany the film growth. Deposition involves the breakdown of the metal-ligand bond, thus leading to free Hhfac ligands and fluorinated ketones. Films have been characterized by energy dispersive X-ray (EDX) microanalysis, grazing incidence X-ray diffraction (GIXRD), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM).