Pulsed laser deposited Ba(Mg1/3Ta2/3)O3 microwave dielectric thin films

被引：0

作者：

Chu, YH ^{[1
]}

Lin, SJ

Liu, KS

Lin, IN

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30043, Taiwan

[2] Natl Tsing Hua Univ, Ctr Mat Sci, Hsinchu 30043, Taiwan

来源：

INTEGRATED FERROELECTRICS | 2003年 / 55卷

关键词：

Ba(Mg1/3Ta2/3)O-3; microwave dielectrics; pulsed laser deposition;

D O I：

10.1080/10584580390259344

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ba(Mg1/3Ta2/3 )O-3 (BMT) microwave dielectric thin films were successfully synthesized by a modified pulsed laser deposition (PLD) process, which includes low temperature (200degreesC) deposition and high temperature (>500degreesC) annealing. Crystalline structured BMT thin films were obtained when the PLD-deposited films were post-annealed at a temperature higher than 500degreesC in oxygen atmosphere. The characteristics of BMT thin film, including crystallinity, grain size, film roughness, and dielectric properties were improved with annealing temperature, achieving dielectric constant K = 23.5 and dissipation factor tan delta = 0.015 (at 1 MHz) for the 800degreesC-annealed films.

引用

页码：887 / 894

页数：8