Ultrasonic fingerprint sensor using a piezoelectric micromachined ultrasonic transducer array integrated with complementary metal oxide semiconductor electronics

被引:183
作者
Lu, Y. [1 ]
Tang, H. [2 ]
Fung, S. [1 ]
Wang, Q. [1 ]
Tsai, J. M. [3 ]
Daneman, M. [3 ]
Boser, B. E. [2 ]
Horsley, D. A. [1 ]
机构
[1] Univ Calif Davis, Berkeley Sensor & Actuator Ctr, Davis, CA 95616 USA
[2] Univ Calif Berkeley, Berkeley Sensor & Actuator Ctr, Berkeley, CA 94720 USA
[3] InvenSense Inc, San Jose, CA 95110 USA
基金
美国国家科学基金会;
关键词
Dielectric devices - Metallic compounds - Piezoelectricity - MOS devices - Wafer bonding - CMOS integrated circuits - Finite element method - Silicon wafers - Metals - Oxide semiconductors - Ultrasonic transducers - Silicones - Transistors;
D O I
10.1063/1.4922915
中图分类号
O59 [应用物理学];
学科分类号
摘要
This paper presents an ultrasonic fingerprint sensor based on a 24 x 8 array of 22MHz piezoelectric micromachined ultrasonic transducers (PMUTs) with 100 mu m pitch, fully integrated with 180 nm complementary metal oxide semiconductor (CMOS) circuitry through eutectic wafer bonding. Each PMUT is directly bonded to a dedicated CMOS receive amplifier, minimizing electrical parasitics and eliminating the need for through-silicon vias. The array frequency response and vibration mode-shape were characterized using laser Doppler vibrometry and verified via finite element method simulation. The array's acoustic output was measured using a hydrophone to be similar to 14 kPa with a 28V input, in reasonable agreement with predication from analytical calculation. Pulse-echo imaging of a 1D steel grating is demonstrated using electronic scanning of a 20 x 8 sub-array, resulting in 300mV maximum received amplitude and 5: 1 contrast ratio. Because the small size of this array limits the maximum image size, mechanical scanning was used to image a 2D polydimethylsiloxane fingerprint phantom (10mm x 8mm) at a 1.2mm distance from the array. (C) 2015 AIP Publishing LLC.
引用
收藏
页数:4
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