Field effect transistors based on phosphorene nanoribbon with selective edge-adsorption: A first-principles study

被引：16

作者：

Hu, Mengli ^{[1
]}

Yang, Zhixiong ^{[2
,3
]}

Zhou, Wenzhe ^{[1
]}

Li, Aolin ^{[1
]}

Pan, Jiangling ^{[1
]}

Ouyang, Fangping ^{[1
,2
,3
]}

机构：

[1] Cent S Univ, Inst Super Microstruct & Ultrafast Proc Adv Ma, Sch Phys & Elect, Changsha 410083, Hunan, Peoples R China

[2] Cent S Univ, Powder Met Res Inst, Changsha 410083, Hunan, Peoples R China

[3] Cent S Univ, State Key Lab Powder Met, Changsha 410083, Hunan, Peoples R China

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2018年 / 98卷

基金：

中国国家自然科学基金;

关键词：

Phosphorene nanoribbons; Field effect transistors (FET); First-principles calculation; Selective edge-adsorption; Transport properties; BLACK PHOSPHORUS; ELECTRONIC-PROPERTIES; GRAPHENE;

D O I：

10.1016/j.physe.2017.12.027

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

By using density functional theory (DFT) and nonequilibrium Green's function (NEGF), field effect transistor (FET) based on zigzag shaped phosphorene nanoribbons (ZPNR) are investigated. The FETs are constructed with bareedged ZPNRs as electrodes and H, Cl or OH adsorbed ZPNRs as channel. It is found FETs with the three kinds of channel show similar transport properties. The FET is p-type with a maximum current on/off ratio of 10(4) and a minimum off-current of 1 nA. The working mode of FETs is dependent on the parity of channel length. It can be either enhancement mode or depletion mode and the off-state current shows an even-odd oscillation. The current oscillations are interpreted with density of states (DOS) analysis and methods of evolution operator and tight-binding Hamiltonian. Operating mechanism of the designed FETs is also presented with projected local density of states and band diagrams.

引用

页码：60 / 65

页数：6

共 32 条

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