Influence of Annealing on Solution-Processed Indium Oxide Thin-Film Transistors Under Ambient Air and Wet Conditions

被引：17

作者：

Kim, Bo Sung ^{[1
]}

Kim, Hyun Jae ^{[2
]}

机构：

[1] Korea Univ, Dept Display & Semicond Phys, Sejong City 30019, South Korea

[2] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 09期

基金：

新加坡国家研究基金会;

关键词：

Indium oxide (In2O3); oxide semiconductor; oxide thin-film transistor (TFT); solution process; LOW-TEMPERATURE; SOL-GEL; SEMICONDUCTORS;

D O I：

10.1109/TED.2016.2591622

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of annealing on solution-processed indium oxide (In2O3) films was investigated under ambient air and wet conditions at 250 degrees C, 300 degrees C, and 350 degrees C, respectively. The air-annealed films exhibited excellent thin-film transistor characteristics including field-effect mobility of 0.11-3.53 cm(2)/Vs and subthreshold slope of 0.28-0.36 V/dec. Whereas the wet-annealed films showed a conductor-like behavior due to >100 times higher carrier concentration than the air-annealed films. The results of X-ray photoelectron spectroscopy supported the decrease of hydroxyl groups in the In2O3 films by wetannealing, reducing their electron trap states and leading to more charge carriers.

引用

页码：3558 / 3561

页数：4

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