Organic Interposer CoWoS-R+ (plus) Technology

被引：21
作者：
Lin, M. L. [1 ]
Liu, M. S. [1 ]
Chen, H. W. [1 ]
Chen, S. M. [1 ]
Yew, M. C. [1 ]
Chen, C. S. [1 ]
Jeng, Shin-Puu [1 ]
机构：
[1] Taiwan Semicond Mfg Co, 6,Creat Rd 2,Hsinchu Sci Pk, Hsinchu 30077, Taiwan
来源：
IEEE 72ND ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2022) | 2022年
关键词：
Organic interposer; HPC package; CoWoS-R; RDL; fine pitch Si-based connection block; IPD capacitor integration;
D O I：
10.1109/ECTC51906.2022.00008
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Organic interposer (CoWoS-R) technology is one of the most promising heterogeneous integration platforms for high performance computing (HPC) applications. Components such as chiplets, high-bandwidth memory (HBM), and passives can be integrated into an organic interposer with excellent yield and reliability. CoWoS-R provides low RC interconnect with good signal isolation and design scalability. The new organic interposer CoWoS-R+ (plus) successfully integrates both a large amount of high density IPD (integrated passive device) and fine pitch Si-based connection block for convenient IP migration. IPD serves as decoupling (de-cap) capacitor, which is critical to the high-speed data operations in advanced logic circuits, where stable voltage supplies are required. The distance between SOC devices and capacitors is minimized to assure fast response. The feeding resistance is greatly reduced by thick power mesh and bump via in the organic interposer. The advantages in connectivity and power integrity of new CoWoS-R+ (plus) technology are presented.
引用
收藏
页码：1 / 6
页数：6
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