High-power, narrow-ridge, mid-infrared interband cascade lasers

被引：43

作者：

Canedy, C. L. ^{[1
]}

Kim, C. S. ^{[1
]}

Kim, M. ^{[1
]}

Larrabee, D. C. ^{[1
]}

Nolde, J. A. ^{[1
]}

Bewley, W. W. ^{[1
]}

Vurgaftman, I. ^{[1
]}

Meyer, J. R. ^{[1
]}

机构：

[1] Naval Res Lab, Washington, DC 20375 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2008年 / 26卷 / 03期

关键词：

D O I：

10.1116/1.2884733

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two ten-stage interband cascade laser structures were grown by solid-source molecular beam epitaxy. The wafers were processed into both broad-area ridges for threshold characterization and Au-electroplated narrow ridges for high-temperature cw operation. Pulsed threshold current densities in the broad-area devices were as low as 3.8 A/cm(2) at 78 K and 590 A/cm(2) at 300 K. An 11-mu m-wide ridge exhibited a new maximum cw operating temperature of 288 K at lambda=4.1 mu m. An even longer-wavelength device emitted at 5.1 mu m with a maximum cw operating temperature of 229 K. (C) 2008 American Vacuum Society.

引用

页码：1160 / 1162

页数：3

共 14 条

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