Digital integrated circuit using integrated InAlAs/InGaAs/InP HEMTs and InAs/AlSb/GaSb RITDs

被引：6

作者：

Fay, P ^{[1
]}

Lu, J

Xu, Y

Bernstein, GH

Gonzalez, A

Mazumder, P

Chow, DH

Schulman, JN

机构：

[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

[2] Univ Michigan, Dept Elect & Comp Engn, Ann Arbor, MI 48109 USA

[3] HRL Labs LLC, Malibu, CA 90265 USA

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 12期

关键词：

D O I：

10.1049/el:20010547

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The demonstration of the first integrated circuit using monolithically integrated InAs/AlSb/GaSb resonant interband tunnelling diodes (RITDs) and InAlAs/InGaAs/InP high electron mobility transistors (HEMTs) is reported. A D-flipflop (D-FF) was implemented using the monostable/bistable logic element (MOBILE) circuit architecture, with a measured effective voltage gain in excess of 380. Power dissipation of less than 2.8 mW/gate was measured.

引用

页码：758 / 759

页数：2

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