Photoluminescence properties of eu-implanted AlxGa1-xN (0≤x≤1)

被引：4

作者：

Fujiwara, T ^{[1
]}

Wakahara, A ^{[1
]}

Nakanishi, Y ^{[1
]}

Yoshida, A ^{[1
]}

Oshima, T ^{[1
]}

Kamiya, T ^{[1
]}

机构：

[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 4418580, Japan

来源：

PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7 | 2005年 / 2卷 / 07期

关键词：

D O I：

10.1002/pssc.200461431

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Photoluminescence properties of Eu-implanted AlGaN with whole Al content are investigated. Strong photoluminescence (PL) lines attributed to D-5(0) - T-7(j) transitions of Eu3+ are observed from Eu-doped AlGaN with whole Al content. The PL intensity becomes maximum around Al content of x=0.2. From the results of time-resolved PL, the decay time of Eu3+-related PL decreases with increasing Al content. The intensity enhanement effect of Eu3+-rerated luminescence by AlGaN is mainly due to the improvement of energy transfer efficiency rather than the improvement of transition probability of Eu3+ by changing the crystal field.

引用

页码：2805 / 2808

页数：4

共 6 条

[1] Visible and infrared rare-earth-activated electroluminescence from indium tin oxide Schottky diodes to GaN:Er on Si [J].

Garter, M ;

Scofield, J ;

Birkhahn, R ;

Steckl, AJ .

APPLIED PHYSICS LETTERS, 1999, 74 (02) :182-184

[2] Photoluminescence and cathodoluminescence of GaN doped with Tb [J].

Lozykowski, HJ ;

Jadwisienczak, WM ;

Brown, I .

APPLIED PHYSICS LETTERS, 2000, 76 (07) :861-863

[3] Effects of Al composition on luminescence properties of europium implanted AlxGa1-xN (0 ≤ x ≤ 1) [J].

Nakanishi, Y ;

Wakahara, A ;

Okada, H ;

Yoshida, A ;

Ohshima, T ;

Itoh, H ;

Shibata, T ;

Tanaka, M .

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07) :2623-2626

[4] Spectral and time-resolved photoluminescence studies of Eu-doped GaN [J].

Nyein, EE ;

Hömmerich, U ;

Heikenfeld, J ;

Lee, DS ;

Steckl, AJ ;

Zavada, JM .

APPLIED PHYSICS LETTERS, 2003, 82 (11) :1655-1657

[5] Red emission from Eu-doped GaN luminescent films grown by metalorganic chemical vapor deposition [J].

Pan, M ;

Steckl, AJ .

APPLIED PHYSICS LETTERS, 2003, 83 (01) :9-11

[6] Blue emission from Tm-doped GaN electroluminescent devices [J].

Steckl, AJ ;

Garter, M ;

Lee, DS ;

Heikenfeld, J ;

Birkhahn, R .

APPLIED PHYSICS LETTERS, 1999, 75 (15) :2184-2186

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