Fermi-level pinning in full metal/high-k/SiO2/Si stacks

被引：4

作者：

Huang, Anping ^{[1
]}

Zhang, Xinjiang ^{[1
]}

Li, Yue ^{[1
]}

Wang, Mei ^{[1
]}

Xiao, Zhisong ^{[1
]}

机构：

[1] Beihang Univ, Sch Phys, Beijing 100191, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2017年 / 122卷 / 19期

基金：

中国国家自然科学基金;

关键词：

WORK-FUNCTION; METAL GATE; DEVICES; TECHNOLOGY; INTERFACES; FINFET;

D O I：

10.1063/1.5005570

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fermi-level pinning (FLP) in full Metal/High-k/SiO2/Si stacks is investigated based on the improved electron state density (IESD) model. The SiO2 interlayer between the high-k layer and Si and the effects of the high-k/SiO2/Si interface on FLP are analyzed. The effective work function (EWF) is influenced by the density of states in high-k/SiO2/Si stacks with the exception of the effects of the electron state density in the metal gate. The IESD model provides physical insights and is a simple and convenient method to calculate the EWF of MOS devices with different types. (C) 2017 Author(s).

引用

页数：6

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