Fermi-level pinning in full metal/high-k/SiO2/Si stacks

被引：4
作者：
Huang, Anping [1 ]
Zhang, Xinjiang [1 ]
Li, Yue [1 ]
Wang, Mei [1 ]
Xiao, Zhisong [1 ]
机构：
[1] Beihang Univ, Sch Phys, Beijing 100191, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2017年 / 122卷 / 19期
基金：
中国国家自然科学基金;
关键词：
WORK-FUNCTION; METAL GATE; DEVICES; TECHNOLOGY; INTERFACES; FINFET;
D O I：
10.1063/1.5005570
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Fermi-level pinning (FLP) in full Metal/High-k/SiO2/Si stacks is investigated based on the improved electron state density (IESD) model. The SiO2 interlayer between the high-k layer and Si and the effects of the high-k/SiO2/Si interface on FLP are analyzed. The effective work function (EWF) is influenced by the density of states in high-k/SiO2/Si stacks with the exception of the effects of the electron state density in the metal gate. The IESD model provides physical insights and is a simple and convenient method to calculate the EWF of MOS devices with different types. (C) 2017 Author(s).
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页数：6
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