Correlation of Electrical and Structural Properties of Single As-Grown GaAs Nanowires on Si (111) Substrates

被引：33

作者：

Bussone, Genziana ^{[1
,2
]}

Schaefer-Eberwein, Heiko ^{[2
]}

Dimakis, Emmanouil ^{[3
,4
]}

Biermanns, Andreas ^{[2
]}

Carbone, Dina ^{[1
]}

Tahraoui, Abbes ^{[3
]}

Geelhaar, Lutz ^{[3
]}

Bolivar, Peter Haring ^{[2
]}

Schuelli, Tobias U. ^{[1
]}

Pietsch, Ullrich ^{[2
]}

机构：

[1] European Synchrotron Radiat Facil, BP 220, F-38043 Grenoble, France

[2] Univ Siegen, D-57068 Siegen, Germany

[3] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

[4] Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01328 Dresden, Germany

来源：

NANO LETTERS | 2015年 / 15卷 / 02期

关键词：

single GaAs nanowires; electrical characterization; X-ray nanodiffraction; correlation; plastic deformation; axial interfaces; CHARGE-LIMITED CURRENTS; SILICON; STRAIN;

D O I：

10.1021/nl5037879

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We present the results of the study of the correlation between the electrical and structural properties of individual GaAs nanowires measured in their as-grown geometry. The resistance and the effective charge carrier mobility were extracted for several nanowires, and subsequently, the same nano-objects were investigated using X-ray nanodiffraction. This revealed a number of perfectly stacked zincblende and twinned zincblende units separated by axial interfaces. Our results suggest a correlation between the electrical parameters and the number of intrinsic interfaces.

引用

页码：981 / 989

页数：9

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