Application of picosecond four-wave mixing and photoluminescence techniques for investigation of carrier dynamics in bulk crystals and heterostructures of GaN

被引：8

作者：

Jarasiünas, K ^{[1
]}

Mailinauskas, T ^{[1
]}

Kadys, A ^{[1
]}

Aleksiejünas, R ^{[1
]}

Südzius, M ^{[1
]}

Miasojedovas, S ^{[1
]}

Jursenas, S ^{[1
]}

Zukauskas, A ^{[1
]}

Gogova, D ^{[1
]}

Kakanakova-Georgieva, A ^{[1
]}

Janzén, E ^{[1
]}

Larsson, H ^{[1
]}

Monemar, B ^{[1
]}

Gibart, P ^{[1
]}

Beaumont, B ^{[1
]}

机构：

[1] Vilnius State Univ, Inst Mat Sci & Appl Res, LT-2040 Vilnius, Lithuania

来源：

E-MRS 2004 FALL MEETING SYMPOSIA C AND F | 2005年 / 2卷 / 03期

关键词：

D O I：

10.1002/pssc.200460609

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Complementary characterization of the highly-excited nitrides has been performed by using time-resolved four-wave mixing and photoluminescence techniques. Defect-density and excitation dependent carrier recombination and transport have been studied in GaN heterostructures and free-standing crystals, grown by various technologies (hot-wall MOCVD, standard MOCVD, and HVPE) on different substrates (6H-SiC, 4H-SiC, or sapphire). The determined value of carrier lifetime varied from 300 ps in the GaN/SiC epilayers up to 3 ns in the bulk crystals, while the bipolar diffusion coefficient D was found to be in the range from 1.5 cm(2)/s to 2.9 cm(2)/s, correspondingly. An increase of D with excitation density in bulk HVPE crystals was attributed to screening of potential barriers around dislocations. A complete saturation of FWM diffraction in hot-wall MOCVD grown GaN/SiC heterostructures revealed a low threshold of stimulated recombination (0.5 mJ/cm(2)), as confirmed by spectra and intensity of photoluminesce. (c) 2005 WILEY-VCH Verlag GmbH C Co. KGaA, Weinheim.

引用

页码：1006 / 1009

页数：4

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