Defect-induced ferromagnetism in undoped and Mn-doped zirconia thin films

被引：71

作者：

Zippel, Jan ^{[1
]}

Lorenz, Michael ^{[1
]}

Setzer, Annette ^{[1
]}

Wagner, Gerald ^{[2
]}

Sobolev, Nikolai ^{[3
,4
]}

Esquinazi, Pablo ^{[1
]}

Grundmann, Marius ^{[1
]}

机构：

[1] Univ Leipzig, Inst Expt Phys 2, D-04103 Leipzig, Germany

[2] Univ Leipzig, Inst Mineral Kristallog & Mat Wissensch, D-04275 Leipzig, Germany

[3] Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal

[4] Univ Aveiro, I3N, P-3810193 Aveiro, Portugal

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 12期

关键词：

DILUTED MAGNETIC SEMICONDUCTORS; PULSED-LASER DEPOSITION; OXIDE;

D O I：

10.1103/PhysRevB.82.125209

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A doping-independent ferromagnetic hysteresis at 300 and 5 K was found for both undoped and Mn-doped zirconia thin films with up to 20 at. % Mn. The lack of Mn-induced magnetic ordering is a strong indication that the observed ferromagnetic effects are defect related. Electron paramagnetic resonance analysis supports the conclusion that Mn ions are in a magnetically "silent" state. Cubic ZrO2:Mn films show a noticeable layer ferromagnetic saturation magnetization at 5 K, as compared to the monoclinic and tetragonal films, which clearly correlates with strain and a higher density of dislocations as the dominating microstructural defect.

引用

页数：5

共 26 条

[1] Ferromagnetism in doped thin-film oxide and nitride semiconductors and dielectrics [J].

Chambers, Scott A. .

SURFACE SCIENCE REPORTS, 2006, 61 (08) :345-381

[2] Manganese-doped zirconia nanocrystals [J].

Clavel, Guylhaine ;

Willinger, Marc-Georg ;

Zitoun, David ;

Pinna, Nicola .

EUROPEAN JOURNAL OF INORGANIC CHEMISTRY, 2008, (06) :863-868

[3] Ferromagnetism in defect-ridden oxides and related materials [J].

Coey, J. M. D. ;

Stamenov, P. ;

Gunning, R. D. ;

Venkatesan, M. ;

Paul, K. .

NEW JOURNAL OF PHYSICS, 2010, 12

[4] Cation dopant distributions in nanostructures of transition-metal doped ZnO: Monte Carlo simulations [J].

Droubay, Timothy C. ;

Kaspar, Tiffany C. ;

Kaspar, Bryce P. ;

Chambers, Scott A. .

PHYSICAL REVIEW B, 2009, 79 (07)

[5] Magnetic oxide semiconductors [J].

Fukumura, T ;

Toyosaki, H ;

Yamada, Y .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (04) :S103-S111

[6] Characteristics of transition metal oxide doping of YSZ: Structure and electrical properties [J].

Huang, XJ ;

Weppner, W .

JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS, 1996, 92 (12) :2173-2178

[7] Study of manganese oxide thin films grown by pulsed laser deposition [J].

Isber, S. ;

Majdalani, E. ;

Tabbal, M. ;

Christidis, T. ;

Zahraman, K. ;

Nsouli, B. .

THIN SOLID FILMS, 2009, 517 (05) :1592-1595

[8] Structure and magnetism in Mn-doped zirconia: Density-functional theory studies [J].

Jia, Xingtao ;

Yang, Wei ;

Qin, Minghui ;

Li, Jianping .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2009, 321 (15) :2354-2358

[9] High throughput fabrication of transition-metal-doped epitaxial ZnO thin films: A series of oxide-diluted magnetic semiconductors and their properties [J].

Jin, ZW ;

Fukumura, T ;

Kawasaki, M ;

Ando, K ;

Saito, H ;

Sekiguchi, T ;

Yoo, YZ ;

Murakami, M ;

Matsumoto, Y ;

Hasegawa, T ;

Koinuma, H .

APPLIED PHYSICS LETTERS, 2001, 78 (24) :3824-3826

[10] Defect-induced magnetic order in pure ZnO films [J].

Khalid, M. ;

Ziese, M. ;

Setzer, A. ;

Esquinazi, P. ;

Lorenz, M. ;

Hochmuth, H. ;

Grundmann, M. ;

Spemann, D. ;

Butz, T. ;

Brauer, G. ;

Anwand, W. ;

Fischer, G. ;

Adeagbo, W. A. ;

Hergert, W. ;

Ernst, A. .

PHYSICAL REVIEW B, 2009, 80 (03)

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