21.3 dBm 18.5 GHz-BW 8-way E-band power amplifier in 28 nm high performance mobile CMOS

A fully integrated broadband E-band power amplifier (PA) is implemented in 28 nm CMOS process. To enhance the output power (P-OUT), an 8-way differential series-parallel power combiner is used together with the neutralised bootstrapped cascode amplifier topology. The unit PAs are realised by both NMOS and PMOS transistors, respectively, which cancel the amplitude-to-phase modulation (AM-PM) distortion due to non-linear gate-to-source capacitance (C-GS) of NMOS and PMOS transistors under large input voltage amplitude. The presented PA achieves a saturated output power (P-SAT) of 21.3 dBm with more than 18.5 GHz -3 dB small-signal bandwidth (BW-3 dB).