Influence of annealing temperature on the properties of transparent conductive and near-infrared reflective ZnO:Ga films

被引：59

作者：

Ma, Quan-Bao ^{[1
]}

Ye, Zhi-Zhen ^{[1
]}

He, Hai-Ping ^{[1
]}

Zhu, Li-Ping ^{[1
]}

Huang, Jing-Yun ^{[1
]}

Zhang, Yin-Zhu ^{[1
]}

Zhao, Bing-Hui ^{[1
]}

机构：

[1] Zhejiang Univ, Dept Mat, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

SCRIPTA MATERIALIA | 2008年 / 58卷 / 01期

基金：

中国国家自然科学基金;

关键词：

ZnO : Ga thin films; annealing; electrical resistivity; optical spectroscopy; semiconductor compounds;

D O I：

10.1016/j.scriptamat.2007.09.009

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Highly transparent conductive and near-infrared (IR) reflective Ga-doped ZnO films were deposited on glass substrate by DC reactive magnetron sputtering. The influence of post-annealing temperature on the structural, electrical and optical properties of the films was investigated. The lowest resistivity of 2.6 x 10(-4) Omega cm was obtained at an annealing temperature of 450 C. The films have low transmittance and high reflectance in the near-IR range. The average transmittance of the films is over 90% in the visible range. (C) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：21 / 24

页数：4

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