Optical properties of the InAs/InAlGaAs quantum dots subjected to thermal treatments

被引：7

作者：

Jo, Byounggu ^{[1
,2
]}

Kim, Jaesu ^{[1
]}

Lee, Kwang Jae ^{[1
]}

Kim, Hyunjune ^{[1
]}

Park, Dongwoo ^{[1
]}

Lee, Cheul-Ro ^{[1
]}

Kim, Jin Soo ^{[1
]}

Bae, Sung Bum ^{[2
]}

Han, Won Seok ^{[2
]}

Oh, Dae Kon ^{[2
]}

Leem, Jae-Young ^{[3
]}

Kim, Jong Su ^{[4
]}

Lee, Sang Jun ^{[5
]}

Noh, Sam Kyu ^{[5
]}

机构：

[1] Chonbuk Natl Univ, Div Adv Mat Engn, Res Ctr Adv Mat Dev, Jeonju 561756, South Korea

[2] Elect & Telecommun Res Inst, IT Convergence & Components Lab, Taejon 305350, South Korea

[3] Inje Univ, Sch Nano Engn, Gimhae 621749, South Korea

[4] Yeungnam Univ, Dept Phys, Kyongsan 712749, South Korea

[5] Korea Res Inst Stand & Sci, Nano Mat Evaluat Ctr, Taejon 305600, South Korea

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 22期

关键词：

Quantum dot; Post-growth annealing; Inter-diffusion; Optical properties;

D O I：

10.1016/j.tsf.2010.03.051

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The inter-diffusion kinetics of group-III elements at the interface between self-assembled InAs quantum dots (QDs) and InAlGaAs barriers were investigated indirectly by post-growth annealing treatments and photoluminescence (PL) spectroscopy. The emission wavelength of the InAs/InAlGaAs QDs subjected to thermal annealing at 550 degrees C was 1444 nm at 10K. which indicated a 57 nm red shift compared to the as-grown sample (1387 nm). The emission wavelength was blue-shifted with further increases in annealing temperature to 650 degrees C. Although there was a blue shift in the emission wavelength at an annealing temperature of 600 and 650 degrees C, the emission peak was still longer than that of the as-grown sample. These results were explained by the difference in inter-diffusion probability between group-III elements at the interface between the InAs QDs and InAlGaAs barrier. (C) 2010 Elsevier BM. All rights reserved.

引用

页码：6429 / 6431

页数：3

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