Hydrothermal synthesis of novel Zn2SnO4 octahedron microstructures assembled with hexagon nanoplates

被引：45

作者：

Ji, Xiaoxu ^{[1
]}

Huang, Xintang ^{[1
]}

Liu, Jinping ^{[1
]}

Jiang, Jian ^{[1
]}

Li, Xin ^{[1
]}

Ding, Ruimin ^{[1
]}

Hu, Yingying ^{[1
]}

Wu, Fei ^{[1
]}

Li, Qiang ^{[1
]}

机构：

[1] Cent China Normal Univ, Ctr Nanosci & Nanotechnol, Dept Phys, Wuhan 430079, Hubei, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2010年 / 503卷 / 02期

基金：

中国国家自然科学基金;

关键词：

Semiconductors; Crystal growth; Optical properties; STANNATE; FILMS;

D O I：

10.1016/j.jallcom.2009.12.038

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Zn2SnO4 with novel octahedron structures have been successfully synthesized on a large scale by applying surfactant hexadecyl trimethyl ammonium bromide (CTAB) throughout controllable hydrothermal reaction. X-ray diffraction (XRD), scanning electron microcopy (SEM), transmission electron microscopy (TEM), and high-resolution transmission electron microscopy (HRTEM) were used to characterize the final products. The results have revealed that three-dimensional (3D) Zn2SnO4 octahedrons were assembled with numerous intercrossed hexagon nanoplates with a mean edge length of 300 nm and an average thickness of 50 nm. Based on the time-dependent experimental results, the growth mechanism has been thoroughly investigated. The morphology of as-prepared octahedrons evolved from cubes with branched structures on their surfaces to octahedrons assembled with hexagon nanoplates, indicating that the process of crystal growth was controlled by a crystallization-dissolution-recrystallization growth mechanism. More importantly, we found that CTAB played a key role during the total formation process of as-obtained Zn2SnO4 octahedrons. UV-vis spectroscopy was further employed to estimate the band gap energy of the octahedron microstructures. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：L21 / L25

页数：5

共 28 条

[1] Photoelectrochemical Study of the Band Structure of Zn2SnO4 Prepared by the Hydrothermal Method [J].

Alpuche-Aviles, Mario A. ;

Wu, Yiying .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2009, 131 (09) :3216-3224

[2]

BELLIARD F, 2009, J ALLOY COMPD, V484, P25

[3] Ultrathin Films of Single-Walled Carbon Nanotubes for Electronics and Sensors: A Review of Fundamental and Applied Aspects [J].

Cao, Qing ;

Rogers, John A. .

ADVANCED MATERIALS, 2009, 21 (01) :29-53

[4] Synthesis, characterization and photocatalytic property of nano-sized Zn2SnO4 [J].

Cun, W ;

Wang, XM ;

Zhao, JC ;

Mai, BX ;

Sheng, GY ;

Peng, PA ;

Fu, JM .

JOURNAL OF MATERIALS SCIENCE, 2002, 37 (14) :2989-2996

[5] Zinc tin oxide thin film transistor sensor [J].

Dutta, Soumya ;

Dodabalapur, Ananth .

SENSORS AND ACTUATORS B-CHEMICAL, 2009, 143 (01) :50-55

[6] Hydrothermal preparation and characterization of Zn2SnO4 particles [J].

Fang, J ;

Huang, AH ;

Zhu, PX ;

Xu, NS ;

Xie, JQ ;

Chi, JS ;

Feng, SH ;

Xu, RR ;

Wu, MM .

MATERIALS RESEARCH BULLETIN, 2001, 36 (7-8) :1391-1397

[7] Humidity sensitive characteristics of Zn2SnO4-LiZnVO4 thick films prepared by the sol-gel method [J].

Fu, G ;

Chen, H ;

Chen, ZX ;

Zhang, JX ;

Kohler, H .

SENSORS AND ACTUATORS B-CHEMICAL, 2002, 81 (2-3) :308-312

[8] Hydrothermal synthesis, characterization, and photocatalytic properties of Zn2SnO4 [J].

Fu, Xianliang ;

Wang, Xuxu ;

Long, Jinlin ;

Ding, Zhengxin ;

Yan, Tingjiang ;

Zhang, Guoying ;

Zhang, Zizhong ;

Lin, Huaxiang ;

Fu, Xianzhi .

JOURNAL OF SOLID STATE CHEMISTRY, 2009, 182 (03) :517-524

[9] Stability of transparent zinc tin oxide transistors under bias stress [J].

Goerrn, P. ;

Hoelzer, P. ;

Riedl, T. ;

Kowalsky, W. ;

Wang, J. ;

Weimann, T. ;

Hinze, P. ;

Kipp, S. .

APPLIED PHYSICS LETTERS, 2007, 90 (06)

[10] Growth of ternary oxide nanowires by gold-catalyzed vapor-phase evaporation [J].

Jie, JS ;

Wang, GZ ;

Han, XH ;

Fang, JP ;

Yu, QX ;

Liao, Y ;

Xu, B ;

Wang, QT ;

Hou, JG .

JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (24) :8249-8253

← 1 2 3 →