Memory Effect of Low-Temperature Processed ZnO Thin-Film Transistors Having Metallic Nanoparticles as Charge Trapping Elements

In this study, non-volatile memory effect was characterized using the single-transistor-based memory devices based on self-assembled gold nanoparticles (Au-NP) as the charge trapping elements and atomic-layer deposited ZnO as the channel layer. The fabricated memory devices showed controllable and reliable threshold voltage shifts according to the program/erase operations that resulted from the charging/discharging of charge carriers in the charge trapping elements. Reliable non-volatile memory properties were also confirmed by the endurance and data retention measurements. The low temperature processes of the key device elements, i.e., Au-NP charge trapping layer and ZnO channel layer, enable the use of this device structure to the transparent/flexible non-volatile memory applications in the near future.