Physical modeling of single-trap RTS statistical distribution in Flash memories

被引：40

作者：

Ghetti, A. ^{[1
]}

Bonanomi, M. ^{[1
]}

Compagnoni, C. Monzio

Spinelli, A. S.

Lacaita, A. L.

Visconti, A. ^{[1
]}

机构：

[1] STMicroelect, Flash Memory Grp, Adv Technol Dev, NVMTD, Via Olivetti 2, I-20041 Agrate Brianza, Italy

来源：

2008 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 46TH ANNUAL | 2008年

关键词：

RTS; atomistic doping; non-volatile memory reliability;

D O I：

10.1109/RELPHY.2008.4558954

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we present an accurate physical modeling for the statistical distribution of Random Telegraph Signal threshold voltage fluctuations in Flash memories by means of 3D device simulations accounting for realistic cell morphology, random discrete doping and random trap location. The model quantitatively describes the statistical behavior of the fluctuation amplitude, pointing out an exponential distribution which is in quite good agreement to what experimentally observed. The large distribution spread is explained on the basis of inhomogeneous substrate conduction, i.e. percolation effects induced by fixed charge, random discrete doping and current crowding due to local field enhancement. In addition, we investigate also the statistical spread dependence on technological parameters such as substrate doping, deriving design guidelines for technology optimization against Random Telegraph Signal instabilities.

引用

页码：610 / +

页数：3

共 17 条

[1]

Agostinelli M, 2005, INT EL DEVICES MEET, P671

[2] Impact of single charge trapping in nano-MOSFETs - Electrostatics versus transport effects [J].

Alexander, CL ;

Brown, AR ;

Watling, JR ;

Asenov, A .

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2005, 4 (03) :339-344

[3] Hierarchical approach to "atomistic" 3-D MOSFET simulation [J].

Asenov, A ;

Brown, AR ;

Davies, JH ;

Saini, S .

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1999, 18 (11) :1558-1565

[4] Random telegraph signal amplitudes in sub 100 nm (decanano) MOSFETs: A 3D 'atomistic' simulation study [J].

Asenov, A ;

Balasubramaniam, R ;

Brown, AR ;

Davies, JH ;

Saini, S .

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :279-282

[5] Random telegraph signals and low-frequency noise in n-metal-oxide-semiconductor field-effect transistors with ultranarrow channels [J].

Bu, HM ;

Shi, Y ;

Yuan, XL ;

Wu, J ;

Gu, SL ;

Zheng, YD ;

Majima, H ;

Ishikuro, H ;

Hiramoto, T .

APPLIED PHYSICS LETTERS, 2000, 76 (22) :3259-3261

[6]

CAI Y, 2007, P SSDM C, P478

[7] Statistical model for random telegraph noise in Flash memories [J].

Compagnoni, Christian Monzio ;

Gustneroli, Riccardo ;

Spinelli, Alessandro S. ;

Lacaita, Andrea L. ;

Bonanomi, Mauro ;

Visconti, Angelo .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (01) :388-395

[8] Giant random telegraph signals in nanoscale floating-gate devices [J].

Fantini, Paolo ;

Ghetti, Andrea ;

Marinoni, Andrea ;

Ghidini, Gabriella ;

Visconti, Angelo ;

Marmiroli, Andrea .

IEEE ELECTRON DEVICE LETTERS, 2007, 28 (12) :1114-1116

[9] Random telegraph noise in flash memories - Model and technology scaling [J].

Fukuda, Koichi ;

Shimizu, Yuui ;

Amemiya, Kazumi ;

Kamoshida, Masahiro ;

Hu, Chenming .

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, :169-+

[10]

Gusmeroli R., 2006, IEDM Tech. Dig, P483

← 1 2 →