Improved reliability characteristics of Ge MOS devices by capping Hf or Zr on interfacial layer

被引：1

作者：

Li, Yan-Lin ^{[1
]}

Chang-Liao, Kuei-Shu ^{[1
]}

Chang, Yu-Wei ^{[1
]}

Huang, Tse-Jung ^{[1
]}

Li, Chen-Chien ^{[1
]}

Gu, Zhao-Chen ^{[1
]}

Chen, Po-Yen ^{[1
]}

Wu, Tzung-Yu ^{[1
]}

Huang, Jiayi ^{[1
]}

Chu, Fu-Chuan ^{[1
]}

Yi, Shih-Han ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 30013, Taiwan

来源：

MICROELECTRONICS RELIABILITY | 2017年 / 79卷

关键词：

Ge MOS device; Equivalent oxide thickness; Interfacial layer; Reliability; Cap layer; IMPROVED ELECTRICAL CHARACTERISTICS;

D O I：

10.1016/j.microrel.2017.10.018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultralow equivalent oxide thickness and excellent reliability characteristics in Ge MOS devices with ZrO2 gate dielectrics are achieved by capping Hf or Zr on interfacial layer. Device with a Hf-cap layer demonstrates the lowest interface trap density and stress-induced leakage current. On the other hand, device with a Zr-cap layer exhibits the lowest hysteresis effects and stress-induced voltage shifts. The HfGeOx IL of high quality and ZrGeOx IL with few oxide traps are promising to improve reliability characteristics in Ge MOS devices.

引用

页码：136 / 139

页数：4

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