Influence on the sp3/sp2 character of the carbon on the insertion of nitrogen in RFMS carbon nitride films

被引：23

作者：

Bouchet-Fabre, B. ^{[1
]}

Lazar, G. ^{[1
,2
]}

Ballutaud, D. ^{[3
]}

Godet, C. ^{[4
]}

Zellama, K. ^{[5
]}

机构：

[1] CEA Saclay, Lab Francis Perrin, DSM DRECAM SPAM CNRS, URA 2453, F-91191 Gif Sur Yvette, France

[2] Bacau Univ, IFIM, Bacau 600115, Romania

[3] CNRS, GEMaC UMR 8635, F-92195 Meudon, France

[4] Univ Rennes 1, CNRS, UMR 6627, Lab Phys Atomes, F-35000 Rennes, France

[5] Univ Picardie Jules Verne, Fac Sci, Lab Phys Mat Condensee, F-80039 Amiens, France

来源：

关键词：

carbon nitride; XPS; Raman; FTIR;

D O I：

10.1016/j.diamond.2007.12.031

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

RFMS carbon nitride films have been elaborated at several substrate temperatures between 150 degrees C and 450 degrees C, where they evolve from a highly resistive to highly conductive comportment. Their local structure has been determined from X-ray photoemission, Raman and infrared spectroscopic results. The films composition has been measured by nuclear reaction analysis and elastic recoil detection. We will correlate the strong modifications of the electronic properties of the films to their well characterized structural changes. We will show how the substrate temperature acts on the incorporation of nitrogen in carboneous RFMS films and which is the resulting consequence on the sp(3)/sp(2) character of the carbon network. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：700 / 704

页数：5

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