Growth, characterization and optoelectronic applications of pure-phase large-area CsPb2Br5 flake single crystals

被引:101
作者
Zhang, Zhaojun [1 ,3 ]
Zhu, Yanming [1 ,3 ]
Wang, Weiliang [1 ,3 ]
Zheng, Wei [2 ,3 ]
Lin, Richeng [1 ,3 ]
Huang, Feng [2 ,3 ]
机构
[1] Sun Yat Sen Univ, Sch Phys, Xingang Xi Rd 135, Guangzhou 510275, Guangdong, Peoples R China
[2] Sun Yat Sen Univ, Sch Mat, Xingang Xi Rd 135, Guangzhou 510275, Guangdong, Peoples R China
[3] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Xingangxi Rd 135, Guangzhou 510275, Guangdong, Peoples R China
基金
中国国家自然科学基金;
关键词
UV PHOTODETECTOR; LEAD HALIDE; PEROVSKITE; LUMINESCENT; CESIUM; CSPBX3; BR; CL; NANOCRYSTALS;
D O I
10.1039/c7tc04834c
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
To clarify the controversies on CsPb2Br5 and extend its opto-electronic applications, from a thermodynamic equilibrium growth system, pure phase high quality CsPb2Br5 single crystals (maximum area: 5 x 5 mm(2), minimum thickness: 160 nm) were successfully obtained. Optical characterization results indicated a 3.87 eV bandgap for CsPb2Br5, clarifying the controversies on CsPb2Br5. The fabricated photodetector showed a sensitive and fast deep-UV photoresponse, demonstrating the potential applications of CsPb2Br5 in deep-UV detection. Theoretical calculations suggested that the wide bandgap of CsPb2Br5 resulted from its layered structure and short Pb-Br bonds.
引用
收藏
页码:446 / 451
页数:6
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