共 21 条
Electron Density and Optical Emission Measurements of SF6/O2 Plasmas for Silicon Etch Processes
被引:16
作者:
Morshed, M. M.
[1
]
Daniels, S. M.
[1
]
机构:
[1] Dublin City Univ, Sch Elect Engn, Natl Ctr Plasma Sci & Technol, Dublin 9, Ireland
基金:
爱尔兰科学基金会;
关键词:
OES;
hairpin probe;
SF6;
O-2;
electron density;
atomic fluorine;
SPECTROSCOPY;
SI;
DIAGNOSTICS;
DISCHARGES;
D O I:
10.1088/1009-0630/14/4/09
中图分类号:
O35 [流体力学];
O53 [等离子体物理学];
学科分类号:
070204 ;
080103 ;
080704 ;
摘要:
This work investigates internal plasma process parameters using a hairpin resonance probe and optical emission spectroscopy. The dependence of electron density and atomic fluorine on the percentage of oxygen in an SF6/O-2 discharge was measured using these methods. An RIE Oxford Instruments 80 plus chamber was used for the experiments. Two different process powers (100 W and 300 W) at a constant pressure (100 mTorr) were used, and it was found that the optical emission intensity of the 703.7 nm and 685.6 nm lines of atomic fluorine increased rapidly as oxygen was added to the SF6 discharge, reached their maximum at an O-2 fraction of 20% and then decreased with further addition of oxygen. The plasma electron density was also strongly influenced by the addition of O-2.
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页码:316 / 320
页数:5
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