Electron Density and Optical Emission Measurements of SF6/O2 Plasmas for Silicon Etch Processes

被引:16
作者
Morshed, M. M. [1 ]
Daniels, S. M. [1 ]
机构
[1] Dublin City Univ, Sch Elect Engn, Natl Ctr Plasma Sci & Technol, Dublin 9, Ireland
基金
爱尔兰科学基金会;
关键词
OES; hairpin probe; SF6; O-2; electron density; atomic fluorine; SPECTROSCOPY; SI; DIAGNOSTICS; DISCHARGES;
D O I
10.1088/1009-0630/14/4/09
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
This work investigates internal plasma process parameters using a hairpin resonance probe and optical emission spectroscopy. The dependence of electron density and atomic fluorine on the percentage of oxygen in an SF6/O-2 discharge was measured using these methods. An RIE Oxford Instruments 80 plus chamber was used for the experiments. Two different process powers (100 W and 300 W) at a constant pressure (100 mTorr) were used, and it was found that the optical emission intensity of the 703.7 nm and 685.6 nm lines of atomic fluorine increased rapidly as oxygen was added to the SF6 discharge, reached their maximum at an O-2 fraction of 20% and then decreased with further addition of oxygen. The plasma electron density was also strongly influenced by the addition of O-2.
引用
收藏
页码:316 / 320
页数:5
相关论文
共 21 条
[1]   Gas discharge plasmas and their applications [J].
Bogaerts, A ;
Neyts, E ;
Gijbels, R ;
van der Mullen, J .
SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY, 2002, 57 (04) :609-658
[2]   Emission, thermocouple, and electrical measurements in SF6/Ar/O2 SiC etching discharges [J].
Brown, MS ;
Scofield, JD ;
Ganguly, BN .
JOURNAL OF APPLIED PHYSICS, 2003, 94 (02) :822-830
[3]   Study of the reactive ion etching of 6H-SiC and 4H-SiC in SF6/Ar plasmas by optical emission spectroscopy and laser interferometry [J].
Camara, N ;
Zekentes, K .
SOLID-STATE ELECTRONICS, 2002, 46 (11) :1959-1963
[4]   OPTICAL-EMISSION SPECTROSCOPY OF REACTIVE PLASMAS - A METHOD FOR CORRELATING EMISSION INTENSITIES TO REACTIVE PARTICLE DENSITY [J].
COBURN, JW ;
CHEN, M .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3134-3136
[5]   DEPENDENCE OF F-ATOM DENSITY ON PRESSURE AND FLOW-RATE IN CF4 GLOW-DISCHARGES AS DETERMINED BY EMISSION-SPECTROSCOPY [J].
COBURN, JW ;
CHEN, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02) :353-356
[6]   PLASMA-ETCHING OF SI AND SIO2 IN SF6-O2 MIXTURES [J].
DAGOSTINO, R ;
FLAMM, DL .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) :162-167
[7]   SPECTROSCOPIC DIAGNOSTICS OF CF4-O2 PLASMAS DURING SI AND SIO2 ETCHING PROCESSES [J].
DAGOSTINO, R ;
CRAMAROSSA, F ;
DEBENEDICTIS, S ;
FERRARO, G .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) :1259-1265
[8]   Optical plasma emission spectroscopy of etching plasmas used in Si-based semiconductor processing [J].
Donnelly, VM ;
Malyshev, MV ;
Schabel, M ;
Kornblit, A ;
Tai, W ;
Herman, IP ;
Fuller, NCM .
PLASMA SOURCES SCIENCE & TECHNOLOGY, 2002, 11 (3A) :A26-A30
[9]   Towards closed loop control of a plasma tool using OES [J].
Goodyear, Andrew ;
Cooke, Mike .
MICROELECTRONIC ENGINEERING, 2009, 86 (4-6) :953-955
[10]   Determination of Oxygen Concentration in Heavily Doped Silicon Wafer by Laser Induced Breakdown Spectroscopy [J].
Ji Zhen-Guo ;
Xi Jun-Hua ;
Mao Qi-Nan .
JOURNAL OF INORGANIC MATERIALS, 2010, 25 (08) :893-896