Nanomachining with a focused neon beam: A preliminary investigation for semiconductor circuit editing and failure analysis

被引：33

作者：

Tan, Shida ^{[1
]}

Livengood, Richard ^{[1
]}

Hack, Paul ^{[1
]}

Hallstein, Roy ^{[1
]}

Shima, Darryl ^{[1
]}

Notte, John ^{[2
]}

McVey, Shawn ^{[2
]}

机构：

[1] Intel Corp, Santa Clara, CA 95054 USA

[2] Carl Zeiss NTS, Peabody, MA 01960 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2011年 / 29卷 / 06期

关键词：

amorphisation; copper; failure analysis; field ionisation; focused ion beam technology; metallic thin films; nanoelectromechanical devices; neon; silicon compounds; transmission electron microscopy; HIGH-BRIGHTNESS; ION;

D O I：

10.1116/1.3660797

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As the semiconductor device scaling trend continues, advancement in both focused ion beam source development and application innovations are needed to retain failure analysis and nanomachining application capabilities. In this work, a neon gas field ionization source was studied for its nanomachining properties. The authors have analyzed neon's nanomachining precision at 10 and 20 keV on blank Cu and SiO2 thin films. Subsurface material amorphization from neon and its correlation with beam current distribution are characterized by TEM. In addition, some preliminary nanomachining work was performed on a 32 nm test chip and successfully demonstrated end-pointing on various device layers. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3660797]

引用

页数：6

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