Electrical conductivity and lattice expansion of β-Ga2O3 below room temperature

被引：89
作者：
Villora, Encarnacion G. [1 ]
Shimamura, Kiyoshi [1 ]
Ujiie, Takekazu [2 ]
Aoki, Kazuo [2 ]
机构：
[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
[2] Koha Co Ltd, Nerima Ku, Tokyo 1760022, Japan
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 20期
关键词：
D O I：
10.1063/1.2910770
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The temperature dependence of the electrical properties of beta-Ga(2)O(3) is analyzed from liquid helium to room temperature by Hall measurements. Below 100 K, the carrier motion takes place within the impurity conduction band and it shows a power-law dependence. An electrostructural coupling is ascertained. Thermal activation in the conduction band is observed above 100 K, with an activation energy E(a)=7 meV. Thermal conductivity is measured to 13 W m(-1) K(-1). Further, it is shown that Ti is a good Ohmic electrode for n-type beta-Ga(2)O(3) substrates. (C) 2008 American Institute of Physics.
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