Cathodoluminescence from nanocrystalline silicon films in the scanning electron microscope

被引：2

作者：

Méndez, B ^{[1
]}

Piqueras, J

Plugaru, R

Craciun, G

Nastase, N

Cremades, A

Nogales, E

机构：

[1] Univ Complutense Madrid, Fac Fis, Dept Fis Mat, ES-28040 Madrid, Spain

[2] Inst Microtechnol, RO-72996 Bucharest, Romania

来源：

SOLID STATE PHENOMENA | 1998年 / 63-4卷

关键词：

nanocrystalline silicon; cathodoluminescence; porous silicon;

D O I：

10.4028/www.scientific.net/SSP.63-64.191

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Luminescence emission of nanocrystalline silicon films has been studied by cathodoluminescence (CL) in the scanning electron microscope. As deposited films show visible luminescence with dominant blue band as well as a red band. The evolution of CL bands after implantation and anodization treatments is investigated. Our results suggest that the dominant blue band has a complex character with a component at 400 nm which appears related to quantum size effects.

引用

页码：191 / 197

页数：7

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