Parameter extraction for PSP MOSFET model using particle swarm optimization

被引：0
|
作者：
Thakker, R. A. [1 ]
Gandhi, Nkunj [1 ]
Patil, M. B. [1 ]
Anil, K. G. [1 ]
机构：
[1] Indian Inst Technol, Dept Elect Engn, Bombay, Maharashtra, India
来源：
PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007 | 2007年
关键词：
MOSFET parameter extraction; particle swarm optimization;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper demonstrates the application of Particle Swarm Optimization (PSO) for parameter extraction of MOSFET model for the first time. Parameters are extracted for PSP MOS model for 65 nm technology NMOS devices. It has been shown that the performance of the PSO algorithm is better than the Genetic Algorithm (GA) in terms of accuracy and consistency.
引用
收藏
页码：130 / 133
页数：4
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