Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures

被引：23

作者：

Hu, Zhongqiang ^{[1
,2
]}

Wang, Xinjun ^{[1
]}

Nan, Tianxiang ^{[1
]}

Zhou, Ziyao ^{[3
,4
]}

Ma, Beihai ^{[5
]}

Chen, Xiaoqin ^{[1
]}

Jones, John G. ^{[2
]}

Howe, Brandon M. ^{[2
]}

Brown, Gail J. ^{[2
]}

Gao, Yuan ^{[1
]}

Lin, Hwaider ^{[1
]}

Wang, Zhiguang ^{[1
]}

Guo, Rongdi ^{[1
]}

Chen, Shuiyuan ^{[1
]}

Shi, Xiaoling ^{[1
]}

Shi, Wei ^{[1
]}

Sun, Hongzhi ^{[1
]}

Budil, David ^{[6
]}

Liu, Ming ^{[3
,4
]}

Sun, Nian X. ^{[1
]}

机构：

[1] Northeastern Univ, Dept Elect & Comp Engn, Boston, MA 02115 USA

[2] Air Force Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA

[3] Xi An Jiao Tong Univ, Elect Mat Res Lab, Key Lab, Minist Educ, Xian 710049, Peoples R China

[4] Xi An Jiao Tong Univ, Int Ctr Dielect Res, Xian 710049, Peoples R China

[5] Argonne Natl Lab, Div Energy Syst, 9700 S Cass Ave, Argonne, IL 60439 USA

[6] Northeastern Univ, Dept Chem, Boston, MA 02115 USA

来源：

SCIENTIFIC REPORTS | 2016年 / 6卷

基金：

美国国家科学基金会;

关键词：

ELECTRIC-FIELD CONTROL; MAGNETIC-PROPERTIES; ATOMIC LAYERS; VOLTAGE; CHARGE;

D O I：

10.1038/srep32408

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Magnetoelectric effect, arising from the interfacial coupling between magnetic and electrical order parameters, has recently emerged as a robust means to electrically manipulate the magnetic properties in multiferroic heterostructures. Challenge remains as finding an energy efficient way to modify the distinct magnetic states in a reliable, reversible, and non-volatile manner. Here we report ferroelectric switching of ferromagnetic resonance in multiferroic bilayers consisting of ultrathin ferromagnetic NiFe and ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films, where the magnetic anisotropy of NiFe can be electrically modified by low voltages. Ferromagnetic resonance measurements confirm that the interfacial charge-mediated magnetoelectric effect is dominant in NiFe/PLZT heterostructures. Nonvolatile modification of ferromagnetic resonance field is demonstrated by applying voltage pulses. The ferroelectric switching of magnetic anisotropy exhibits extensive applications in energy-efficient electronic devices such as magnetoelectric random access memories, magnetic field sensors, and tunable radio frequency (RF)/microwave devices.

引用

页数：8

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