Record-low 4 mΩ•mm2 specific on-resistance for 20V trench MOSFETs

被引：3

作者：

in 't Zandt, MAA ^{[1
]}

Hijzen, EA ^{[1
]}

Hueting, RJE ^{[1
]}

Koops, GEJ ^{[1
]}

机构：

[1] Philips Res Leuven, B-3001 Louvain, Belgium

来源：

ISPSD'03: 2003 IEEE 15TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS PROCEEDINGS | 2003年

关键词：

D O I：

10.1109/ISPSD.2003.1225224

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A process is shown by which both the specific on-resistance R-ds,R-on and the gate-drain charge density Q(gd) can be reduced. Reduction of the R-ds,R-on is achieved by optimising the channel profile (p-body) towards a more box-shaped profile. The Qgd is reduced by going to smaller trench dimensions below the I-line lithography limits, without using deep-UV lithography. For polygonal cell structures, it is shown that narrowing the trenches also gives further R-ds,R-on reduction. Record values for R-ds,R-on of 4 MOmega(.)mm(2) (at V-gs = 10V) have been obtained for a 20V Trench MOSFET with a 2 mum cell pitch. Furthermore, for a 'conventional' 30V Trench MOSFET, we obtained an R-ds,R-on of 7 MOmega(.)mm(2) (at V-gs = 10V) by a more box-shaped p-body profile.

引用

页码：32 / 35

页数：4

共 38 条

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