Photocrosslinking polymeric ionic liquids via anthracene cycloaddition for organic electronics

被引:16
作者
Popere, Bhooshan C. [1 ,4 ]
Sanoja, Gabriel E. [1 ,2 ,5 ]
Thomas, Elayne M. [3 ]
Schauser, Nicole S. [3 ]
Jones, Seamus D. [1 ]
Bartels, Joshua M. [1 ]
Helgeson, Matthew E. [1 ]
Chabinyc, Michael L. [3 ]
Segalman, Rachel A. [1 ,3 ]
机构
[1] Univ Calif Santa Barbara, Dept Chem Engn, Santa Barbara, CA 93106 USA
[2] Univ Calif Berkeley, Dept Chem & Biomol Engn, Berkeley, CA 94720 USA
[3] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[4] Dow Chem Co USA, 455 Forest St, Marlborough, MA 01752 USA
[5] PSL Res Univ, Ecole Super Phys & Chim Ind Ville Paris ESPCI, ParisTech, Sci & Ingn Mat Molle,CNRS UMR 7615, 10 Rue Vauquelin, F-75231 Paris, France
基金
美国国家科学基金会;
关键词
THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; BLOCK-COPOLYMERS; RADICAL POLYMERIZATION; DYNAMIC POLYMERS; MOLECULAR-WEIGHT; CONDUCTIVITY; ELECTROLYTES; TEMPERATURE; MEMBRANES;
D O I
10.1039/c8tc02561d
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Polymeric ionic liquids (i.e., PILs) are single ion-conducting materials that exhibit the thermal and electrochemical stability of ionic liquids and the mechanical properties of polymers. Although PILs are exciting for a variety of applications in energy conversion and storage, the tradeoff between mechanics and ion transport remains an important limitation in materials design. Herein, a photocrosslinkable PIL based on the cycloaddition reaction of anthracene is converted from a viscous liquid into a soft solid without detrimental effects on the bulk ionic conductivity. The independent control of mechanical- and ion-conducting properties results from negligible changes in polymer segmental dynamics (i.e., glass transition temperature) upon crosslinking. This was demonstrated for both a polymer (i.e., N = 279) and its corresponding oligomer (i.e., N = 10). The ease of processability facilitated by the presented molecular design is illustrated by both patterning the PIL into m-sized features, and incorporating it as a dielectric in thin-film transistors for low-voltage operation independent of device fabrication geometry.
引用
收藏
页码:8762 / 8769
页数:8
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