共 67 条
Photocrosslinking polymeric ionic liquids via anthracene cycloaddition for organic electronics
被引:16
作者:
Popere, Bhooshan C.
[1
,4
]
Sanoja, Gabriel E.
[1
,2
,5
]
Thomas, Elayne M.
[3
]
Schauser, Nicole S.
[3
]
Jones, Seamus D.
[1
]
Bartels, Joshua M.
[1
]
Helgeson, Matthew E.
[1
]
Chabinyc, Michael L.
[3
]
Segalman, Rachel A.
[1
,3
]
机构:
[1] Univ Calif Santa Barbara, Dept Chem Engn, Santa Barbara, CA 93106 USA
[2] Univ Calif Berkeley, Dept Chem & Biomol Engn, Berkeley, CA 94720 USA
[3] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[4] Dow Chem Co USA, 455 Forest St, Marlborough, MA 01752 USA
[5] PSL Res Univ, Ecole Super Phys & Chim Ind Ville Paris ESPCI, ParisTech, Sci & Ingn Mat Molle,CNRS UMR 7615, 10 Rue Vauquelin, F-75231 Paris, France
基金:
美国国家科学基金会;
关键词:
THIN-FILM TRANSISTORS;
FIELD-EFFECT TRANSISTORS;
BLOCK-COPOLYMERS;
RADICAL POLYMERIZATION;
DYNAMIC POLYMERS;
MOLECULAR-WEIGHT;
CONDUCTIVITY;
ELECTROLYTES;
TEMPERATURE;
MEMBRANES;
D O I:
10.1039/c8tc02561d
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Polymeric ionic liquids (i.e., PILs) are single ion-conducting materials that exhibit the thermal and electrochemical stability of ionic liquids and the mechanical properties of polymers. Although PILs are exciting for a variety of applications in energy conversion and storage, the tradeoff between mechanics and ion transport remains an important limitation in materials design. Herein, a photocrosslinkable PIL based on the cycloaddition reaction of anthracene is converted from a viscous liquid into a soft solid without detrimental effects on the bulk ionic conductivity. The independent control of mechanical- and ion-conducting properties results from negligible changes in polymer segmental dynamics (i.e., glass transition temperature) upon crosslinking. This was demonstrated for both a polymer (i.e., N = 279) and its corresponding oligomer (i.e., N = 10). The ease of processability facilitated by the presented molecular design is illustrated by both patterning the PIL into m-sized features, and incorporating it as a dielectric in thin-film transistors for low-voltage operation independent of device fabrication geometry.
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页码:8762 / 8769
页数:8
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