共 80 条
[1]
APPLICATION OF NORMAL PROBABILITY PLOT ANALYSIS TO LUTETIUM ORTHOBORATE STRUCTURE FACTORS AND PARAMETERS
[J].
ABRAHAMS, SC
;
BERNSTEI.JL
;
KEVE, ET
.
JOURNAL OF APPLIED CRYSTALLOGRAPHY,
1971, 4 (AUG1)
:284-&

ABRAHAMS, SC
论文数: 0 引用数: 0
h-index: 0

BERNSTEI.JL
论文数: 0 引用数: 0
h-index: 0

KEVE, ET
论文数: 0 引用数: 0
h-index: 0
[2]
Agilent Technologies, 2012, CrysAlisPro
[3]
Bright tunable white-light emissions from Bi3+/Eu3+ co-doped Ba2Y5B5O17 phosphors via energy transfer for UV-excited white light-emitting diodes
[J].
Annadurai, G.
;
Sun, Liangling
;
Guo, Heng
;
Huang, Xiaoyong
.
JOURNAL OF LUMINESCENCE,
2020, 226

Annadurai, G.
论文数: 0 引用数: 0
h-index: 0
机构:
Taiyuan Univ Technol, Coll Phys & Optoelect, Taiyuan 030024, Peoples R China Taiyuan Univ Technol, Coll Phys & Optoelect, Taiyuan 030024, Peoples R China

Sun, Liangling
论文数: 0 引用数: 0
h-index: 0
机构:
Taiyuan Univ Technol, Coll Phys & Optoelect, Taiyuan 030024, Peoples R China Taiyuan Univ Technol, Coll Phys & Optoelect, Taiyuan 030024, Peoples R China

Guo, Heng
论文数: 0 引用数: 0
h-index: 0
机构:
Taiyuan Univ Technol, Coll Phys & Optoelect, Taiyuan 030024, Peoples R China Taiyuan Univ Technol, Coll Phys & Optoelect, Taiyuan 030024, Peoples R China

Huang, Xiaoyong
论文数: 0 引用数: 0
h-index: 0
机构:
Taiyuan Univ Technol, Coll Phys & Optoelect, Taiyuan 030024, Peoples R China Taiyuan Univ Technol, Coll Phys & Optoelect, Taiyuan 030024, Peoples R China
[4]
Structural and spectroscopic properties of new noncentrosymmetric self-activated borate Rb3EuB6O12 with B5O10 units
[J].
Atuchin, V. V.
;
Subanakov, A. K.
;
Aleksandrovsky, A. S.
;
Bazarov, B. G.
;
Bazarova, J. G.
;
Gavrilova, T. A.
;
Krylov, A. S.
;
Molokeev, M. S.
;
Oreshonkov, A. S.
;
Stefanovich, S. Yu.
.
MATERIALS & DESIGN,
2018, 140
:488-494

Atuchin, V. V.
论文数: 0 引用数: 0
h-index: 0
机构:
RAS, SB, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia
Tomsk State Univ, Funct Elect Lab, Tomsk 634050, Russia
South Ural State Univ, Lab Single Crystal Growth, Chelyabinsk 454080, Russia RAS, SB, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Subanakov, A. K.
论文数: 0 引用数: 0
h-index: 0
机构:
RAS, SB, Baikal Inst Nat Management, Ulan Ude 670047, Russia
Buryat State Univ, Ulan Ude 670000, Russia RAS, SB, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Aleksandrovsky, A. S.
论文数: 0 引用数: 0
h-index: 0
机构:
RAS, SB, Fed Res Ctr, Lab Coherent Opt,Kirensky Inst Phys,KSC, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Inst Nanotechnol Spect & Quantum Chem, Krasnoyarsk 660041, Russia RAS, SB, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Bazarov, B. G.
论文数: 0 引用数: 0
h-index: 0
机构:
RAS, SB, Baikal Inst Nat Management, Ulan Ude 670047, Russia
Buryat State Univ, Ulan Ude 670000, Russia RAS, SB, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Bazarova, J. G.
论文数: 0 引用数: 0
h-index: 0
机构:
RAS, SB, Baikal Inst Nat Management, Ulan Ude 670047, Russia
Buryat State Univ, Ulan Ude 670000, Russia RAS, SB, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Gavrilova, T. A.
论文数: 0 引用数: 0
h-index: 0
机构:
RAS, SB, Inst Semicond Phys, Lab Nanodiagnost & Nanolithog, Novosibirsk 630090, Russia RAS, SB, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Krylov, A. S.
论文数: 0 引用数: 0
h-index: 0
机构:
RAS, SB, Fed Res Ctr, Lab Mol Spect,Kirensky Inst Phys,KSC, Krasnoyarsk 660036, Russia RAS, SB, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Molokeev, M. S.
论文数: 0 引用数: 0
h-index: 0
机构:
RAS, SB, Fed Res Ctr, Lab Crystal Phys,Kirensky Inst Phys,KSC, Krasnoyarsk 660036, Russia
Far Eastern State Transport Univ, Dept Phys, Khabarovsk 680021, Russia
Siberian Fed Univ, Krasnoyarsk 660079, Russia RAS, SB, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Oreshonkov, A. S.
论文数: 0 引用数: 0
h-index: 0
机构:
RAS, SB, Fed Res Ctr, Lab Mol Spect,Kirensky Inst Phys,KSC, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Dept Photon & Laser Technol, Krasnoyarsk 660079, Russia RAS, SB, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Stefanovich, S. Yu.
论文数: 0 引用数: 0
h-index: 0
机构:
Lomonosov Moscow State Univ, Dept Chem, Moscow 119991, Russia RAS, SB, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia
[5]
Flux Crystal Growth and the Electronic Structure of BaFe12O19 Hexaferrite
[J].
Atuchin, V. V.
;
Vinnik, D. A.
;
Gavrilova, T. A.
;
Gudkova, S. A.
;
Isaenko, L. I.
;
Jiang, Xingxing
;
Pokrovsky, L. D.
;
Prosvirin, I. P.
;
Mashkovtseva, L. S.
;
Lin, Zheshuai
.
JOURNAL OF PHYSICAL CHEMISTRY C,
2016, 120 (09)
:5114-5123

Atuchin, V. V.
论文数: 0 引用数: 0
h-index: 0
机构:
SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia
Tomsk State Univ, Funct Elect Lab, Tomsk 634050, Russia
Novosibirsk State Univ, Lab Semicond & Dielect Mat, Novosibirsk 630090, Russia SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Vinnik, D. A.
论文数: 0 引用数: 0
h-index: 0
机构:
South Ural State Univ, 76 Lenin Aven, Chelyabinsk 454080, Russia SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Gavrilova, T. A.
论文数: 0 引用数: 0
h-index: 0
机构:
SB RAS, Inst Semicond Phys, Lab Nanodiagnost & Nanolithog, Novosibirsk 630090, Russia SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Gudkova, S. A.
论文数: 0 引用数: 0
h-index: 0
机构:
South Ural State Univ, 76 Lenin Aven, Chelyabinsk 454080, Russia
Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Russia SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Isaenko, L. I.
论文数: 0 引用数: 0
h-index: 0
机构:
SB RAS, Inst Geol & Mineral, Lab Crystal Growth, Novosibirsk 630090, Russia SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Jiang, Xingxing
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Funct Crystals & Laser Technol, BCCRD, Beijing 100190, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R China SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Pokrovsky, L. D.
论文数: 0 引用数: 0
h-index: 0
机构:
SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Prosvirin, I. P.
论文数: 0 引用数: 0
h-index: 0
机构:
SB RAS, Boreskov Inst Catalysis, Novosibirsk 630090, Russia SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Mashkovtseva, L. S.
论文数: 0 引用数: 0
h-index: 0
机构:
South Ural State Univ, 76 Lenin Aven, Chelyabinsk 454080, Russia SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Lin, Zheshuai
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Funct Crystals & Laser Technol, BCCRD, Beijing 100190, Peoples R China SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia
[6]
Synthesis and Spectroscopic Properties of Monoclinic α-Eu2(MoO4)3
[J].
Atuchin, V. V.
;
Aleksandrovsky, A. S.
;
Chimitova, O. D.
;
Gavrilova, T. A.
;
Krylov, A. S.
;
Molokeev, M. S.
;
Oreshonkov, A. S.
;
Bazarov, B. G.
;
Bazarova, J. G.
.
JOURNAL OF PHYSICAL CHEMISTRY C,
2014, 118 (28)
:15404-15411

Atuchin, V. V.
论文数: 0 引用数: 0
h-index: 0
机构:
SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia
Tomsk State Univ, Funct Elect Lab, Tomsk 634050, Russia
Novosibirsk State Univ, Lab Semicond & Dielect Mat, Novosibirsk 630090, Russia SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Aleksandrovsky, A. S.
论文数: 0 引用数: 0
h-index: 0
机构:
SB RAS, Lab Coherent Opt, Kirensky Inst Phys, Krasnoyarsk 660036, Russia SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Chimitova, O. D.
论文数: 0 引用数: 0
h-index: 0
机构:
SB RAS, Lab Oxide Syst, Baikal Inst Nat Management, Ulan Ude 670047, Russia SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Gavrilova, T. A.
论文数: 0 引用数: 0
h-index: 0
机构:
SB RAS, Inst Semicond Phys, Lab Nanodiagnost & Nanolithog, Novosibirsk 630090, Russia SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Krylov, A. S.
论文数: 0 引用数: 0
h-index: 0
机构:
SB RAS, Kirensky Inst Phys, Lab Mol Spect, Krasnoyarsk 660036, Russia SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Molokeev, M. S.
论文数: 0 引用数: 0
h-index: 0
机构:
SB RAS, Kirensky Inst Phys, Lab Crystal Phys, Krasnoyarsk 660036, Russia SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Oreshonkov, A. S.
论文数: 0 引用数: 0
h-index: 0
机构:
SB RAS, Kirensky Inst Phys, Lab Mol Spect, Krasnoyarsk 660036, Russia SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Bazarov, B. G.
论文数: 0 引用数: 0
h-index: 0
机构:
SB RAS, Lab Oxide Syst, Baikal Inst Nat Management, Ulan Ude 670047, Russia SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Bazarova, J. G.
论文数: 0 引用数: 0
h-index: 0
机构:
SB RAS, Lab Oxide Syst, Baikal Inst Nat Management, Ulan Ude 670047, Russia SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia
[7]
Electronic structure and vibrational properties of KRbAl2B2O7
[J].
Atuchin, V. V.
;
Adichtchev, S. V.
;
Bazarov, B. G.
;
Bazarova, Zh. G.
;
Gavrilova, T. A.
;
Grossman, V. G.
;
Kesler, V. G.
;
Meng, G. S.
;
Lin, Z. S.
;
Surovtsev, N. V.
.
MATERIALS RESEARCH BULLETIN,
2013, 48 (03)
:929-934

Atuchin, V. V.
论文数: 0 引用数: 0
h-index: 0
机构:
SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Adichtchev, S. V.
论文数: 0 引用数: 0
h-index: 0
机构:
SB RAS, Inst Automat & Electrometry, Lab Condensed Matter Spect, Novosibirsk 630090, Russia SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Bazarov, B. G.
论文数: 0 引用数: 0
h-index: 0
机构:
SB RAS, Baikal Inst Nat Management, Lab Oxide Syst, Ulan Ude 670047, Russia SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Bazarova, Zh. G.
论文数: 0 引用数: 0
h-index: 0
机构:
SB RAS, Baikal Inst Nat Management, Lab Oxide Syst, Ulan Ude 670047, Russia SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Gavrilova, T. A.
论文数: 0 引用数: 0
h-index: 0
机构:
SB RAS, Inst Semicond Phys, Lab Nanodiagnost & Nanolithog, Novosibirsk 630090, Russia SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Grossman, V. G.
论文数: 0 引用数: 0
h-index: 0
机构:
SB RAS, Baikal Inst Nat Management, Lab Oxide Syst, Ulan Ude 670047, Russia SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Kesler, V. G.
论文数: 0 引用数: 0
h-index: 0
机构:
Russian Acad Sci, Inst Semicond Phys, Lab Phys Principles Integrated Microelect, Novosibirsk 630090, Russia SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Meng, G. S.
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Tech Inst Phys & Chem, Beijing 100190, Peoples R China
Chinese Acad Sci, Univ Sci & Technol China, Key Lab Quantum Informat, Hefei 230026, Anhui, Peoples R China SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Lin, Z. S.
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Tech Inst Phys & Chem, Beijing 100190, Peoples R China SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

Surovtsev, N. V.
论文数: 0 引用数: 0
h-index: 0
机构:
SB RAS, Inst Automat & Electrometry, Lab Condensed Matter Spect, Novosibirsk 630090, Russia SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia
[8]
Electronic structure of α-SrB4O7: experiment and theory
[J].
Atuchin, V. V.
;
Kesler, V. G.
;
Zaitsev, A. I.
;
Molokeev, M. S.
;
Aleksandrovsky, A. S.
;
Kuzubov, A. A.
;
Ignatova, N. Y.
.
JOURNAL OF PHYSICS-CONDENSED MATTER,
2013, 25 (08)

Atuchin, V. V.
论文数: 0 引用数: 0
h-index: 0
机构:
SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090 90, Russia SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090 90, Russia

Kesler, V. G.
论文数: 0 引用数: 0
h-index: 0
机构:
SB RAS, Inst Semicond Phys, Lab Phys Bases Integrated Microelect, Novosibirsk 630090 90, Russia SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090 90, Russia

Zaitsev, A. I.
论文数: 0 引用数: 0
h-index: 0
机构:
SB RAS, Inst Phys, Lab Crystal Phys, Krasnoyarsk 660036 36, Russia
Siberian Fed Univ, Krasnoyarsk 660041 41, Russia SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090 90, Russia

Molokeev, M. S.
论文数: 0 引用数: 0
h-index: 0
机构:
SB RAS, Inst Phys, Lab Crystal Phys, Krasnoyarsk 660036 36, Russia SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090 90, Russia

Aleksandrovsky, A. S.
论文数: 0 引用数: 0
h-index: 0
机构:
Siberian Fed Univ, Krasnoyarsk 660041 41, Russia
SB RAS, Inst Phys, Lab Coherent Opt, Krasnoyarsk 660036 36, Russia SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090 90, Russia

Kuzubov, A. A.
论文数: 0 引用数: 0
h-index: 0
机构:
Siberian Fed Univ, Krasnoyarsk 660041 41, Russia SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090 90, Russia

Ignatova, N. Y.
论文数: 0 引用数: 0
h-index: 0
机构:
Siberian Fed Univ, Krasnoyarsk 660041 41, Russia SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090 90, Russia
[9]
New double nonlinear-optical borate Rb3SmB6O12: Synthesis, structure and spectroscopic properties
[J].
Atuchin, Victor
;
Subanakov, Alexey
;
Aleksandrovsky, Aleksandr
;
Bazarov, Bair
;
Bazarova, Jibzema
;
Krylov, Alexander
;
Molokeev, Maxim
;
Oreshonkov, Aleksandr
;
Pugachev, Alexey
.
JOURNAL OF ALLOYS AND COMPOUNDS,
2022, 905

Atuchin, Victor
论文数: 0 引用数: 0
h-index: 0
机构:
SB RAS, Lab Opt Mat & Struct, Inst Semicond Phys, Novosibirsk 630090, Russia
Kemerovo State Univ, Res & Dev Dept, Kemerovo 650000, Russia
Novosibirsk State Univ, Dept Appl Phys, Novosibirsk 630090, Russia
Novosibirsk State Tech Univ, Dept Ind Machinery Design, Novosibirsk 630073, Russia SB RAS, Lab Opt Mat & Struct, Inst Semicond Phys, Novosibirsk 630090, Russia

Subanakov, Alexey
论文数: 0 引用数: 0
h-index: 0
机构:
SB RAS, Lab Oxide Syst, Baikal Inst Nat Management, Ulan Ude 670047, Russia SB RAS, Lab Opt Mat & Struct, Inst Semicond Phys, Novosibirsk 630090, Russia

Aleksandrovsky, Aleksandr
论文数: 0 引用数: 0
h-index: 0
机构:
Kirensky Inst Phys Fed Res Ctr KSC SB RAS, Lab Coherent Opt, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Dept Photon & Laser Technol, Krasnoyarsk 660041, Russia SB RAS, Lab Opt Mat & Struct, Inst Semicond Phys, Novosibirsk 630090, Russia

Bazarov, Bair
论文数: 0 引用数: 0
h-index: 0
机构:
SB RAS, Lab Oxide Syst, Baikal Inst Nat Management, Ulan Ude 670047, Russia SB RAS, Lab Opt Mat & Struct, Inst Semicond Phys, Novosibirsk 630090, Russia

Bazarova, Jibzema
论文数: 0 引用数: 0
h-index: 0
机构:
SB RAS, Lab Oxide Syst, Baikal Inst Nat Management, Ulan Ude 670047, Russia SB RAS, Lab Opt Mat & Struct, Inst Semicond Phys, Novosibirsk 630090, Russia

Krylov, Alexander
论文数: 0 引用数: 0
h-index: 0
机构:
Kirensky Inst Phys Fed Res Ctr KSC SB RAS, Lab Mol Spect, Krasnoyarsk 660036, Russia SB RAS, Lab Opt Mat & Struct, Inst Semicond Phys, Novosibirsk 630090, Russia

Molokeev, Maxim
论文数: 0 引用数: 0
h-index: 0
机构:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Lab Crystal Phys, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Krasnoyarsk 660041, Russia
Far Eastern State Transport Univ, Dept Phys, Khabarovsk 680021, Russia SB RAS, Lab Opt Mat & Struct, Inst Semicond Phys, Novosibirsk 630090, Russia

Oreshonkov, Aleksandr
论文数: 0 引用数: 0
h-index: 0
机构:
Kirensky Inst Phys Fed Res Ctr KSC SB RAS, Lab Mol Spect, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Sch Engn & Construct, Krasnoyarsk 660041, Russia SB RAS, Lab Opt Mat & Struct, Inst Semicond Phys, Novosibirsk 630090, Russia

Pugachev, Alexey
论文数: 0 引用数: 0
h-index: 0
机构:
Inst Automat & Electrometry, Lab Condensed Matter Spect, Novosibirsk 630090, Russia SB RAS, Lab Opt Mat & Struct, Inst Semicond Phys, Novosibirsk 630090, Russia
[10]
X-ray photoelectron spectroscopy study of β-BaB2O4 optical surface
[J].
Atuchin, VV
;
Kesler, VG
;
Kokh, AE
;
Pokrovsky, LD
.
APPLIED SURFACE SCIENCE,
2004, 223 (04)
:352-360

Atuchin, VV
论文数: 0 引用数: 0
h-index: 0
机构: Inst Semicond Phys, Novosibirsk 630090, Russia

Kesler, VG
论文数: 0 引用数: 0
h-index: 0
机构: Inst Semicond Phys, Novosibirsk 630090, Russia

Kokh, AE
论文数: 0 引用数: 0
h-index: 0
机构: Inst Semicond Phys, Novosibirsk 630090, Russia

Pokrovsky, LD
论文数: 0 引用数: 0
h-index: 0
机构: Inst Semicond Phys, Novosibirsk 630090, Russia