Optimization and performance of Al2O3/GaN metal-oxide-semiconductor structures

被引：13
作者：
Cico, K.
Kuzmik, J.
Gregusova, D.
Stoklas, R.
Lalinsky, T.
Georgakilas, A.
Pogany, D.
Frohlich, K.
机构：
[1] Inst Elect Engn, SAS, Bratislava 84104, Slovakia
[2] Vienna Univ Technol, Inst Solid State Elect, A-1040 Vienna, Austria
[3] Univ Crete, FORTH, Dept Phys, Mircroelect Res Grp,IESL, Iraklion 71110, Crete, Greece
来源：
MICROELECTRONICS RELIABILITY | 2007年 / 47卷 / 4-5期
关键词：
D O I：
10.1016/j.microrel.2007.01.010
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigate electrical properties of Ni/Al2O3/GaN metal-oxide-semiconductor (MOS) structures having different pre-treatment of GaN surface by O-2, Ar and NH3, combined with various temperature of annealing. MOS and reference Ni/GaN Schottky contact are characterized using current-voltage and capacitance-voltage methods. MOS structures compared with the Schottky contact ones show leakage current reduction for all types of processing, from 3 to 5 orders of magnitude in reverse direct. We observed substantial influence of the pre-treatment on electrical parameters of MOS structures. (C) 2007 Elsevier Ltd. All rights reserved.
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收藏
页码：790 / 793
页数：4
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